We present a theoretical model of composite excitonic states in doped semiconductors. Many-body interactions between a photoexcited electron-hole pair and the electron gas are integrated into a computationally tractable few-body problem, solved by the variational method. We focus on electron-doped ML-MoSe2 and ML-WSe2 due to the contrasting character of their conduction bands. In both cases, the core of the composite is a tightly-bound trion (two electrons and valence-band hole), surrounded by a region depleted of electrons. The composite in ML-WSe2 further includes a satellite electron with different quantum numbers. The theory is general and can be applied to semiconductors with various energy-band properties, allowing one to calculate their excitonic states and to quantify the interaction with the Fermi sea.
@article{arxiv.2202.08374,
title = {Composite excitonic states in doped semiconductors},
author = {Dinh Van Tuan and Hanan Dery},
journal= {arXiv preprint arXiv:2202.08374},
year = {2022}
}