In the framework of the two-band model of a doped semiconductor the self-consistent equations describing the transition into the excitonic insulator state are obtained for the 2D case. It is found that due to the exciton-electron interactions the excitonic phase may arise with doping in a semiconductor stable initially with respect to excitonic transition in the absence of doping. The effects of the strong interactions between electron (hole) Fermi-liquid (FL) and excitonic subsystems can lead to the appearance of the states lying in the middle of the insulating gap.
@article{arxiv.cond-mat/9405032,
title = {Excitonic Instability and Origin of the Mid-Gap States},
author = {Michael N. Kiselev},
journal= {arXiv preprint arXiv:cond-mat/9405032},
year = {2009}
}
Comments
2 pages with 2 figures available upon request, LaTex Version 3.0 (PCTeX), to appear in the Proceedings of the M2S-HTSC IV Conference