English

Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells

Mesoscale and Nanoscale Physics 2009-10-31 v1
Authors: V. Senz , T. Heinzel , T. Ihn , K. Ensslin , G. Dehlinger , D. Gruetzmacher , U. Gennser
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Abstract

Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak localization reduces the metallic behavior around zero magnetic field without destroying it. In the insulating phase, a positive magnetoresistivity emerges close to B=0, possibly related to spin-orbit interactions.

Keywords

weak localization quantum wells Si/SiGe magnetoresistance metallic behavior

Cite

@article{arxiv.cond-mat/9910228,
  title  = {Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells},
  author = {V. Senz and T. Heinzel and T. Ihn and K. Ensslin and G. Dehlinger and D. Gruetzmacher and U. Gennser},
  journal= {arXiv preprint arXiv:cond-mat/9910228},
  year   = {2009}
}

Comments

4 pages, 3 figures

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