Heterointerfaces have been pivotal in unveiling extraordinary interfacial properties and enabling multifunctional material platforms. Despite extensive research on all-oxide interfaces, heterointerfaces between different material classes, such as oxides and nitrides, remain underexplored. Here we present the fabrication of a high-quality Dirac metal antiperovskite Ni3InN, characterized by an extremely low temperature coefficient of resistivity, approximately 1.8*10^-8 {\Omega}*cm/K, over a broad temperature range. Atomically sharp heterointerfaces between Ni3InN and SrVO3 were constructed, revealing intriguing interfacial phenomena. Leveraging layer-resolved scanning transmission electron microscopy and electron energy loss spectroscopy, we identified pronounced charge transfer across the well-ordered interface. Remarkably, this interfacial electron transfer from Ni3InN to SrVO3 induces an insulating interfacial layer and an emergent magnetic moment within the Ni3InN layer, consistent with first-principles calculations. These findings pave the way for novel electronic and spintronic applications by enabling tunable interfacial properties in nitride/oxide systems.
@article{arxiv.2504.13401,
title = {Charge transfer induced insulating state at antiperovskite/perovskite heterointerfaces},
author = {Ting Cui and Ying Zhou and Qianying Wang and Dongke Rong and Haitao Hong and Axin Xie and Jun-Jie Zhang and Qinghua Zhang and Can Wang and Chen Ge and Lin Gu and Shanmin Wang and Kuijuan Jin and Shuai Dong and Er-Jia Guo},
journal= {arXiv preprint arXiv:2504.13401},
year = {2025}
}