Cavity-based compact light source for extreme ultraviolet lithography
Abstract
A critical technology for high-volume manufacturing of nanoscale integrated circuits is a high-power extreme ultraviolet (EUV) light source. Over the past decades, laser-produced plasma (LPP) sources have been actively utilized in this field. However, current LPP light sources may provide insufficient average power to enable future manufacturing at the 3 nm node and below. In this context,accelerator-based light sources are being considered as promising tools for EUV lithography. This paper proposes a regenerative amplifier free-electron laser EUV source with harmonic lasing, drivenby a superconducting energy-recovery linac (ERL). By utilizing the nth harmonic, the required electron beam energy is reduced to 1/sqrt(n) of that in conventional schemes. The proposed configuration, employing an electron beam energy of approximately 0.33 GeV with a short-period (16 mm) undulator, is estimated to provide an average EUV power of about 2 kW. This approach significantly reduces the required electron energy and facility size relative to other accelerator-based proposals,thereby offering new possibilities for constructing high-power EUV sources with low-energy ERLs.
Cite
@article{arxiv.2501.14541,
title = {Cavity-based compact light source for extreme ultraviolet lithography},
author = {Changchao He and Hanxiang Yang and Nanshun Huang and Bo Liu and Haixiao Deng},
journal= {arXiv preprint arXiv:2501.14541},
year = {2025}
}