We report on a semi-empirical tight binding model for 3C-SiC including the effect of sp3d5s* orbitals and spin-orbital coupling. In this work, we illustrate in detail the method to develop such a model for semiconductors with zincblende structure, based on Slater-Koster integrals, and we explain the optimization method used to fit the experimental results with such a model. This method shows high accuracy for the evaluation of 3C-SiC band diagram both in terms of the experimental energy levels at high symmetry points and the effective masses.
@article{arxiv.1901.06600,
title = {Calculating the Band Structure of 3C-SiC Using sp3d5s*+$\Delta$ Model},
author = {Murat Onen and Marco Turchetti},
journal= {arXiv preprint arXiv:1901.06600},
year = {2019}
}