Broadband voltage rectifier induced by linear bias dependence in CoFeB/MgO magnetic tunnel junctions

M. Tarequzzaman; A. S. Jenkins; T. Böhnert; J. Borme; L. Martins; E. Paz; R. Ferreira; P. P. Freitas

doi:10.1063/1.5029363

Broadband voltage rectifier induced by linear bias dependence in CoFeB/MgO magnetic tunnel junctions

Mesoscale and Nanoscale Physics 2018-08-01 v1

Authors: M. Tarequzzaman , A. S. Jenkins , T. Böhnert , J. Borme , L. Martins , E. Paz , R. Ferreira , P. P. Freitas

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

In this paper, the perpendicular magnetic anisotropy (PMA) is tailored by changing the thickness of the free layer with the objective of producing MTJ nano-pillars with smooth linear resistance dependence with both in-plane magnetic field and DC bias. We furthermore demonstrate how this linear bias dependence can be used to create a zero-threshold broadband voltage rectifier, a feature which is important for rectification in wireless charging and energy harvesting applications. By carefully balancing the amount of PMA acting in the free layer the measured RF to DC voltage conversion efficiency can be made as large as 11%.

Keywords

magnetic tunnel junction perpendicular magnetic anisotropy linear bias dependence voltage rectifier energy harvesting

Cite

@article{arxiv.1804.04104,
  title  = {Broadband voltage rectifier induced by linear bias dependence in CoFeB/MgO magnetic tunnel junctions},
  author = {M. Tarequzzaman and A. S. Jenkins and T. Böhnert and J. Borme and L. Martins and E. Paz and R. Ferreira and P. P. Freitas},
  journal= {arXiv preprint arXiv:1804.04104},
  year   = {2018}
}

Comments

7 pages and 4 figures

Broadband voltage rectifier induced by linear bias dependence in CoFeB/MgO magnetic tunnel junctions

Abstract

Keywords

Cite

Comments

Related papers