Atomically-Thin Tsumoite (BiTe) based All-Photonic-Isolator, Information Converter, and Logic-Gate
Abstract
Two-dimensional tsumoite (BiTe), a polymorph of Bi2Te3, has emerged as a promising candidate for nonlinear photonic devices owing to its strong spin-orbit coupling, tunable bandgap, and high carrier mobility characteristics. This work presents a thorough examination of the third-order nonlinear optical response of BiTe dispersions using spatial self-phase modulation (SSPM) spectroscopy. The nonlinear refractive index (n2) and third-order nonlinear susceptibility are quantitatively derived from the diffraction ring patterns, demonstrating third-order nonlinear susceptibility values, similar to or surpassing those of advanced 2D materials. The temporal development and distortion of the SSPM rings are examined using the wind-chime model, and thermal factors influencing the SSPM pattern are analyzed. First-principles electronic band structure studies reveal that the elevated nonlinear susceptibility arises from band dispersion. Direct correlation between carrier transport and third-order nonlinear susceptibility is established. Utilizing these qualities, all photonic devices, including a photonic isolator based on a 2D BiTe-2D hBN heterostructure, are depicted to show asymmetric propagation. A photonic information converter and a logic gate are designed using the cross-phase modulation technique. These findings establish 2D BiTe nanostructure as a formidable nonlinear optical platform for advanced photonic signal processing and integrated photonic applications.
Cite
@article{arxiv.2604.12003,
title = {Atomically-Thin Tsumoite (BiTe) based All-Photonic-Isolator, Information Converter, and Logic-Gate},
author = {Saswata Goswami and Caique Campos de Oliveira and Abhijith M. B. and Varinder Pal and Vidya Kochat and Pulickel M. Ajayan and Samit K. Ray and Pedro A. S. Autreto and Chandra Sekhar Tiwary},
journal= {arXiv preprint arXiv:2604.12003},
year = {2026}
}