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An intrinsic mobility ceiling of Si bulk

Mesoscale and Nanoscale Physics 2011-09-08 v1
Authors: Nuria Garcia-Castello , Joan Daniel Prades , Albert Cirera
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Abstract

We compute by Density Functional Theory-Non Equilibrium Green Functions Formalism (DFT-NEGFF) the conductance of bulk Si along different crystallographic directions. We find a ceiling value for the intrinsic mobility of bulk silicon of 8.4⋅106cm2/V⋅s8.4\cdot10^6 cm^2/V\cdot s. We suggest that this result is related to the lowest effective mass of the <001><001> direction.

Cite

@article{arxiv.1109.1311,
  title  = {An intrinsic mobility ceiling of Si bulk},
  author = {Nuria Garcia-Castello and Joan Daniel Prades and Albert Cirera},
  journal= {arXiv preprint arXiv:1109.1311},
  year   = {2011}
}

Comments

6 pages, 2 figures

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