Alloying V in MnBi$_2$Te$_4$ for Robust Ferromagnetic Coupling and Quantum Anomalous Hall Effect

Y. S. Hou; R. Q. Wu

doi:10.1103/PhysRevB.103.064412

Alloying V in MnBi$_2$Te$_4$ for Robust Ferromagnetic Coupling and Quantum Anomalous Hall Effect

Strongly Correlated Electrons 2021-02-17 v2 Materials Science

Authors: Y. S. Hou , R. Q. Wu

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Abstract

The intrinsic antiferromagnetic (AFM) interlayer coupling in two-dimensional magnetic topological insulator MnBi $_2$ Te $_4$ places a restriction on realizing stable quantum anomalous Hall effect (QAHE) [Y. Deng et al., Science 367, 895 (2020)]. Through density functional theory calculations, we demonstrate the possibility of tuning the AFM coupling to the ferromagnetic coupling in MnBi $_2$ Te $_4$ films by alloying about 50% V with Mn. As a result, QAHE can be achieved without alternation with the even or odd septuple layers. This provides a practical strategy to get robust QAHE in ultrathin MnBi $_2$ Te $_4$ films, rendering them attractive for technological innovations.

Keywords

mnbi2te4 v alloying ferromagnetic coupling quantum anomalous hall effect density functional theory magnetic topological insulator

Cite

@article{arxiv.2004.04862,
  title  = {Alloying V in MnBi$_2$Te$_4$ for Robust Ferromagnetic Coupling and Quantum Anomalous Hall Effect},
  author = {Y. S. Hou and R. Q. Wu},
  journal= {arXiv preprint arXiv:2004.04862},
  year   = {2021}
}

Comments

12 pages, 4 figures and 1 table, and author lists in references updated

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