English

Interlayer Ferromagnetism and High-Temperature Quantum Anomalous Hall Effect in \textit{p}-Doped MnBi$_2$Te$_4$ Multilayers

Materials Science 2021-06-09 v1

Abstract

The interlayer antiferromagnetic coupling hinders the observation of quantum anomalous Hall effect in magnetic topological insulator MnBi2_2Te4_4. We demonstrate that interlayer \textit{ferromagnetism} can be established by utilizing the \textit{p}-doping method in MnBi2_2Te4_4 multilayers. In two septuple-layers system, the interlayer ferromagnetic coupling appears by doping nonmagnetic elements (e.g., N, P, As, Na, Mg, K, and Ca), due to the redistribution of orbital occupations of Mn. We further find that Mg and Ca elements are the most suitable candidates because of their low formation energy. Although, the \textit{p}-doped two septuple layers exhibit topologically trivial band structure, the increase of layer thickness to three (four) septuple layers with Ca (Mg) dopants leads to the formation of the quantum anomalous Hall effect. Our proposed \textit{p}-doping strategy not only makes MnBi2_2Te4_4 become an ideal platform to realize the high-temperature quantum anomalous Hall effect without external magnetic field, but also can compensate the electrons from the intrinsic \textit{n}-type defects in MnBi2_2Te4_4.

Keywords

Cite

@article{arxiv.2101.07684,
  title  = {Interlayer Ferromagnetism and High-Temperature Quantum Anomalous Hall Effect in \textit{p}-Doped MnBi$_2$Te$_4$ Multilayers},
  author = {Yulei Han and Shiyang Sun and Shifei Qi and Xiaohong Xu and Zhenhua Qiao},
  journal= {arXiv preprint arXiv:2101.07684},
  year   = {2021}
}