A new topological insulator - \beta-InTe strained in the layer plane

F. M. Hashimzade; D. A. Huseinova; Z. A. Jahangirli; N. T. Mamedov; B. H. Mehdiyev

A new topological insulator - \beta-InTe strained in the layer plane

Materials Science 2017-08-31 v2

Authors: F. M. Hashimzade , D. A. Huseinova , Z. A. Jahangirli , N. T. Mamedov , B. H. Mehdiyev

Abstract

We have investigated the band structure of the bulk crystal and the (001) surface of the \beta-InTe layered crystal subjected to biaxial stretching in the layer plane. The calculation has been carried out using the full-potential linearized augmented plane wave method (FP LAPW) implemented in WIEN2k. It has been shown that at the strain \Deltaa/a=0.06, where a is the lattice parameter in the layer plane, the band gap in the electronic spectrum collapses. With further strain increase a band inversion occurs. The inclusion of the spin-orbit interaction reopens the gap in the electronic spectrum of a bulk crystal, and our calculations show that the spectrum of the surface states has the form of a Dirac cone, typical for topological insulators.

Keywords

topological insulators dirac cones and topological phases topological insulator

Cite

@article{arxiv.1708.07685,
  title  = {A new topological insulator - \beta-InTe strained in the layer plane},
  author = {F. M. Hashimzade and D. A. Huseinova and Z. A. Jahangirli and N. T. Mamedov and B. H. Mehdiyev},
  journal= {arXiv preprint arXiv:1708.07685},
  year   = {2017}
}

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14 pages, 9 figures

A new topological insulator - \beta-InTe strained in the layer plane

Abstract

Keywords

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