Building on the demonstrated sensitivity of the Heavy Ion Monitor on a Chip (HIMoC) presented in Part I of this work, we performed additional irradiation exposures using 24.8 MeV/u beams of 14N, 22Ne, and 40Ar at the Texas A&M University Cyclotron Institute. A novel simulation workflow was developed that couples the particle-transport toolkit Geant4 with the open-source TCAD simulator DEVSIM to model the heavy-ion-induced signal in HIMoC devices. The model represents energy deposition by primary heavy ions and secondary electrons as Gaussian charge-loss profiles that produce measurable threshold-voltage shifts in the device. Good agreement between simulated and experimental ΔVth distributions was obtained. HIMoC was also shown to generate a signal that scales approximately linearly with a dose-like quantity proportional to ion fluence, LET, and active detector area. These results support HIMoC as a passive heavy-ion dosimeter and provide a framework for modeling the effects of radiation-induced charge loss in charge-trapping non-volatile memory devices.
@article{arxiv.2605.16597,
title = {A Heavy Ion Monitor on a Chip Based on a Non-Volatile Memory Architecture -- Part II: Device Characterization & Modeling},
author = {Dale Julson and Mike Youngs and Hannah Lowrey and David Keltner and Tim Hossain and Clayton Fullwood},
journal= {arXiv preprint arXiv:2605.16597},
year = {2026}
}