A full free spectral range tuning of p-i-n doped Gallium Nitride microdisk cavity
Optics
2015-06-05 v1
Abstract
Effective, permanent tuning of the whispering gallery modes (WGMs) of p-i-n doped GaN microdisk cavity with embedded InGaN quantum dots over one free spectral range is successfully demonstrated by irradiating the microdisks with a ultraviolet laser (380nm) in DI water. For incident laser powers between 150 and 960 nW, the tuning rate varies linearly. Etching of the top surface of the cavity is proposed as the driving force for the observed shift in WGMs, and is supported by experiments. The tuning for GaN/InGaN microdisk cavities is an important step for deterministically realizing novel nanophotonic devices for studying cavity quantum electrodynamics.
Keywords
Cite
@article{arxiv.1206.5416,
title = {A full free spectral range tuning of p-i-n doped Gallium Nitride microdisk cavity},
author = {Nan Niu and Tsung-Li Liu and Igor Aharonovich and Kasey J. Russell and Alexander Woolf and Thomas C. Sadler and Haitham A. R. El-Ella and Menno J. Kappers and Rachel A. Oliver and Evelyn L. Hu},
journal= {arXiv preprint arXiv:1206.5416},
year = {2015}
}