We describe the weak localization correction to conductivity in ultra-thin graphene films, taking into account disorder scattering and the influence of trigonal warping of the Fermi surface. A possible manifestation of the chiral nature of electrons in the localization properties is hampered by trigonal warping, resulting in a suppression of the weak anti-localization effect in monolayer graphene and of weak localization in bilayer graphene. Intervalley scattering due to atomically sharp scatterers in a realistic graphene sheet or by edges in a narrow wire tends to restore weak localization resulting in negative magnetoresistance in both materials.
@article{arxiv.0903.1848,
title = {Weak localization in monolayer and bilayer graphene},
author = {K. Kechedzhi and E. McCann and Vladimir I. Fal'ko and H. Suzuura and T. Ando and B. L. Altshuler},
journal= {arXiv preprint arXiv:0903.1848},
year = {2009}
}
Comments
corrected misprints present in the published version