Water-induced high-performance quantum-dot light-emitting diodes
Abstract
Solution-processed light-emitting diodes (LEDs) are appealing for their potential in the low-cost fabrication of large-area devices. However, the limited performance of solution-processed blue LEDs, particularly their short operation lifetime, is hindering their practical use in display technologies. Here, we demonstrate that trace water in device, previously considered detrimental to most solution-processed LEDs, dramatically enhances the performance of quantum-dot LEDs (QLEDs). This breakthrough stems from our comprehensive mechanism investigations into the positive ageing phenomenon, a long-standing puzzle in the QLED field. Our findings reveal that water passivation on the surface of electron-transport layers, which are composed of zinc-oxide-based nanoparticles, improves charge transport and enhances exciton radiative recombination during device operation. Combined with the advanced top-emitting architecture, our blue QLEDs achieve a high current efficiency of 35.5 cd A-1, a blue index (colour coordinate corrected current efficiency) of over 470 cd A-1 CIEy-1, and unprecedented stability, with an extrapolated T95 lifetime (at an initial brightness of 1,000 cd m-2) of 287 hours. Our work may inspire further exploration into surface passivation of nanocrystalline functional layers, critical for the advancement of emerging solution-processed optoelectronic and electronic devices.
Keywords
Cite
@article{arxiv.2409.04283,
title = {Water-induced high-performance quantum-dot light-emitting diodes},
author = {Wangxiao Jin and Siyu He and Xiuyuan Lu and Xitong Zhu and Dijiong Liu and Guolong Sun and Yanlei Hao and Xiaolin Yan and Yiran Yan and Longjia Wu and Xiongfeng Lin and Wenjun Hou and Weiran Cao and Chuan Liu and Xiaoci Liang and Yuan Gao and Yunzhou Deng and Feng Gao and Yizheng Jin},
journal= {arXiv preprint arXiv:2409.04283},
year = {2024}
}
Comments
23 pages,13 figures,1 table