We experimentally study the optical emission of a thin quantum well and its dynamic modulation by a surface acoustic wave (SAW). We observe a characteristic transition of the modulation from one maximum to two maxima per SAW cycle as the acoustic power is increased which we find in good agreement with numer- ical calculations of the SAW controlled carrier dynamics. At low acoustic powers the carrier mobilites limit electron-hole pair dissociation, whereas at high power levels the induced electric fields give rise to efficient acousto-electric carrier transport. The direct comparison between the experimental data and the numerical simulations provide an absolute calibration of the local SAW phase.
@article{arxiv.1205.0924,
title = {Surface acoustic wave controlled charge dynamics in a thin InGaAs quantum well},
author = {Florian J. R. Schülein and Jens Pustiowski and Kai Müller and Max Bichler and Gregor Koblmüller and Jonathan J. Finley and Achim Wixforth and Hubert J. Krenner},
journal= {arXiv preprint arXiv:1205.0924},
year = {2012}
}