We describe a microfabrication process for superconducting through-silicon vias appropriate for use in superconducting qubit quantum processors. With a sloped-wall via geometry, we can use non-conformal metal deposition methods such as electron-beam evaporation and sputtering, which reliably deposit high quality superconducting films. Via superconductivity is validated by demonstrating zero via-to-via resistance below the critical temperature of aluminum.
@article{arxiv.1708.02226,
title = {Superconducting Through-Silicon Vias for Quantum Integrated Circuits},
author = {Mehrnoosh Vahidpour and William O'Brien and Jon Tyler Whyland and Joel Angeles and Jayss Marshall and Diego Scarabelli and Genya Crossman and Kamal Yadav and Yuvraj Mohan and Catvu Bui and Vijay Rawat and Russ Renzas and Nagesh Vodrahalli and Andrew Bestwick and Chad Rigetti},
journal= {arXiv preprint arXiv:1708.02226},
year = {2017}
}