Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattice in a wide region that extends several nanometers into the GaAs spacer layer below and above the QDs. Finally, we show how V-shaped dislocations originating at the QD/GaAs interface efficiently remove most of the lattice mismatch induced tetragonal distortions in and around the QD.
@article{arxiv.1611.08911,
title = {Quantitative strain analysis of InAs/GaAs quantum dot materials},
author = {Per Erik Vullum and Magnus Nord and Maryam Vatanparast and Sedsel Fretheim Thomassen and Chris Boothroyd and Randi Holmestad and Bjorn-Ove Fimland and Turid Worren Reenaas},
journal= {arXiv preprint arXiv:1611.08911},
year = {2016}
}