High-order harmonic generation of doped semiconductor
Optics
2017-11-22 v1
Abstract
We investigate the high-order harmonic generation (HHG) in doped semiconductors. The HHG is simulated with the single-electron time-dependent Schr\"{o}dinger equation (TDSE). The results show that the high-order harmonics in the second plateau generated from the doped semiconductors is about 1 to 3 orders of magnitude higher than those from the undoped semiconductor. The results are explained based on the analysis of the energy band structure and the time-dependent population imaging. Our work indicates that doping can effectively control the HHG in semiconductor.
Cite
@article{arxiv.1710.08071,
title = {High-order harmonic generation of doped semiconductor},
author = {Tengfei Huang and Xiaosong Zhu and Liang Li and Xi Liu and Pengfei Lan and Peixiang Lu},
journal= {arXiv preprint arXiv:1710.08071},
year = {2017}
}