High order harmonic generation in semiconductors driven at near- and mid-IR wavelengths
Abstract
We study high order harmonics generation (HHG) in crystalline silicon and diamond subjected to near and mid-infrared laser pulses. We employ time-dependent density functional theory and solve the time-dependent Kohn-Sham equation in the single-cell geometry. We demonstrate that clear and clean HHG spectra can be generated with careful selection of the pulse duration. In addition, we simulate dephasing effects in a large silicon super-cell through displacement of atomic positions prepared by a molecular dynamics simulation. We compare our results with the previous calculations by Floss et al. [arXiv:1705.10707] [Phys. Rev. A 97, 011401(R) (2018)] on Diamond at 800 nm and by Tancogne-Dejean et al. [arXiv:1609.09298] [Phys. Rev. Lett. 118, 087403 (2017)] on Si at 3000 nm.
Keywords
Cite
@article{arxiv.2109.07693,
title = {High order harmonic generation in semiconductors driven at near- and mid-IR wavelengths},
author = {David Freeman and Shunsuke Yamada and Atsushi Yamada and Kazuhiro Yabana and Anatoli Kheifets},
journal= {arXiv preprint arXiv:2109.07693},
year = {2022}
}
Comments
Accepted to Phys. Rev. B