Exciton-polariton interference controlled by electric field
Abstract
Linear in the wave-vector terms of an electron Hamiltonian play an important role in topological insulators and spintronic devices. Here we demonstrate how an external electric field controls the magnitude of a linear-in-K term in the exciton Hamiltonian in wide GaAs quantum wells. The dependence of this term on the applied field in a high quality sample was studied by means of the differential reflection spectroscopy. An excellent agreement between the experimental data and the results of calculations using semi-classical non-local dielectric response model confirms the validity of the method and paves the way for the realisation of excitonic Datta-and-Das transistors. In full analogy with the spin-orbit transistor proposed by Datta and Das [Appl. Phys. Lett. {\bf 56}, 665 (1990)], the switch between positive and negative interference of exciton polaritons propagating forward and backward in a GaAs film is achieved by application of an electric field with non-zero component in the plane of the quantum well layer.
Cite
@article{arxiv.2003.04120,
title = {Exciton-polariton interference controlled by electric field},
author = {D. K. Loginov and P. A. Belov and V. G. Davydov and I. Ya. Gerlovin and I. V. Ignatiev and A. V. Kavokin},
journal= {arXiv preprint arXiv:2003.04120},
year = {2020}
}
Comments
30 pages, 6 figures