Bulk single crystal Molybdenum diselenide has been studied for its electronic and thermal transport properties. We perform resistivity measurements with current in-plane (CIP) and current perpendicular to plane (CPP) as a function of temperature. The CIP measurements exhibit metal to semiconductor transition at ≃31 K. In the semiconducting phase (T>31 K), the transport is best explained by variable range hopping (VRH) model. Large magnitude of resistivity in CPP mode indicates strong structural anisotropy. Seebeck coefficient as a function of temperature measured in the range 90−300 K, also agrees well with the VRH model. The room temperature Seebeck coefficient is found to be 139μV/K. VRH fittings of the resistivity and Seebeck coefficient data indicate high degree of localization.
@article{arxiv.1707.02426,
title = {Electron and thermal transport via Variable Range Hopping in MoSe$_{2}$ single crystals},
author = {Dhavala Suri and R. S. Patel},
journal= {arXiv preprint arXiv:1707.02426},
year = {2017}
}