This study presents investigations of Yb-doped β-Ga2O3, an ultrawide bandgap semiconductor with potential use in future power and optoelectronic devices operating in high-radiation environments. The research has focused on the problem of structural damage caused by the implantation of Yb-ions into three differently oriented crystals and the optical response of created systems. The (001), (010), and (-201)-oriented β-Ga2O3 crystals were implanted with three different fluences of 150 keV Yb ions and examined using a variety of experimental techniques: high-resolution X-ray diffraction (HRXRD), Rutherford backscattering spectrometry in channeling mode (RBS/c), Raman and photoluminescence (PL) spectroscopies, to provide comprehensive information about studied systems. Furthermore, the RBS/c studies were supported by Monte Carlo simulations. The results show distinctions between differently oriented crystals. In particular, (010)-oriented crystals are characterized by the lowest concentration of extended defects and the presence of compressive stress. In contrast, samples with the other two orientations exhibit tensile stress and significantly higher levels of extended defects. Interestingly, the PL spectra of (010)-oriented β-Ga2O3 show the lowest emission from Yb3+ ions, suggesting that specific types of extended defects, whose formation is more favorable in the other two orientations than in (010), enhance Yb3+ luminescence instead of suppressing it.
@article{arxiv.2603.09592,
title = {Comprehensive structural and optical analysis of differently oriented Yb-implanted $\beta$-Ga$_2$O$_3$},
author = {Joanna Matulewicz and Renata Ratajczak and Mahwish Sarwar and Ewa Grzanka and Vitalii Ivanov and Damian Kalita and Cyprian Mieszczynski and Przemyslaw Jozwik and Slawomir Prucnal and Ulrich Kentsch and Rene Heller and Elzbieta Guziewicz},
journal= {arXiv preprint arXiv:2603.09592},
year = {2026}
}