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We investigated the structural evolution and optical properties of beta-Ga2O3 crystals implanted with different rare-earth (RE) ions using channeling Rutherford Backscattering Spectrometry, Positron Annihilation, Photoluminescence, and…

While $\beta$-Ga$_2$O$_3$ is considered a promising wide bandgap semiconductor, the impact of ion-induced defect formation and anisotropic elasticity remains poorly understood. Here, we combine a simulation and experiment X-ray diffraction…

Radiation-induced crystal lattice damage and its recovery in wide bandgap oxides, in particular beta-gallium oxide (beta-Ga2O3), is a complex process. This paper presents the first study on the process of the defects accumulation in…

Ultrawide bandgap semiconductor $\beta$-Ga2O3 holds extensive potential for applications in high-radiation environments. One of the primary challenges in its practical application is unveiling the mechanisms of surface irradiation damage…

Modern semiconductor materials are increasingly used in multidisciplinary systems demonstrating cross-interactions between mechanical strains and electronic potentials, which gives rise to ubiquitous applications in high sensitivity,…

Materials Science · Physics 2021-06-04 Lijie Li

We investigate the effects of alloying and growth orientation on the properties of the ultra-wide bandgap semiconductor \beta-Ga2O3 and pseudomorphic AlGaO alloy heterojunctions. Band offsets are computed from first principles using density…

The question of optical bandgap anisotropy in the monoclinic semiconductor $\beta$-Ga2O3 was revisited by combining accurate optical absorption measurements with theoretical analysis, performed using different advanced computation methods.…

The structural properties of a $\beta$-Ga$_2$O$_3$ single crystal grown by the oxide crystal growth from cold crucible (OCCC) method were investigated using synchrotron radiation X-ray topography and X-ray reticulography. The region grown…

Recently reported remarkably high radiation tolerance of $\gamma$/$\beta$-Ga$_2$O$_3$ double-polymorphic structure brings this ultrawide bandgap semiconductor to the frontiers of power electronics applications that are able to operate in…

Materials Science · Physics 2024-09-25 Ru He , Junlei Zhao , Jesper Byggmästar , Huan He , Flyura Djurabekova

Beta-phase gallium oxide ($\beta$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs…

In this article, the electronic band structure $\beta-(Al_xGa_{1-x})_2O_3$ alloy system is calculated with $\beta-Ga_2O_3$ as the bulk crystal. The technique of band unfolding is implemented to obtain the effective bandstructure…

Materials Science · Physics 2022-07-18 Ankit Sharma , Uttam Singisetti

The Z-scan measurements for the non-centrosymmetric optical crystals {\beta}-BaTeMo2O9 (BTMO) were performed. The corresponding experiments were carried out using the 5 ns pulses of the second harmonic of a nanosecond Nd:YAG laser at the…

Materials Science · Physics 2014-03-11 I. Fuks-Janczarek , R. Miedzinski , M. G. Brik , A. Majchrowski , L. R. Jaroszewicz , I. V. Kityk

This paper reports an innovative process to fabricate $\beta$-Ga$_{2}$O$_{3}$ microtubes and nanomembranes based on ion implantation in (100)-oriented single-crystals. We show that, under specific flux and fluence conditions, the…

The bowing of the energy of the three lowest band-to-band transitions in $\beta$-(Al$_{x}$Ga$_{1-x}$)$_2$O$_3$ alloys was resolved using a combined density functional theory (DFT) and generalized spectroscopic ellipsometry (GSE) approach.…

Polarized and unpolarized neutron diffraction has been used to search for magnetic order in YBa$_2$Cu$_3$O$_{6+x}$ superconductors. Most of the measurements were made on a high quality crystal of YBa$_2$Cu$_3$O$_{6.6}$. It is shown that…

Superconductivity · Physics 2009-11-07 H. A. Mook , Pengcheng Dai , S. M. Hayden , A. Hiess , J. W. Lynn , S. -H. Lee , F. Dogan

The present work aims at investigating the defect accumulation and recovery dynamics in the inherently anisotropic $\beta$-Ga$_2$O$_3$ lattice. A systematic Rutherford Backscattering Spectrometry in Channelling mode (RBS/C) analysis of…

$\beta$-Ga$_2$O$_3$ is an ultra-wide bandgap semiconductor and is thus expected to be optically transparent to light of sub-bandgap wavelengths well into the ultraviolet. Contrary to this expectation, it is found here that free electrons in…

Resonant optical excitation of apical oxygen vibrational modes in the normal state of underdoped YBa2Cu3O6+x induces a transient state with optical properties similar to those of the equilibrium superconducting state. Amongst these, a…

Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with…

Semiconductor heterostructures capable of separating photogenerated electrons and holes have a wide range of optoelectronic applications, including photodetectors, solar cells, and photocatalysts. ${\beta}$-Ga$_2$O$_3$ and rutile GeO$_2$…

Materials Science · Physics 2025-09-25 D. Q. Fang
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