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$\beta$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ has gained intensive interests of research and application as an ultrawide bandgap semiconductor. Epitaxial growth technique of the $\beta$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ thin film possesses a…
The research investigates coherent interactions between sub-GeV electrons and oriented scintillator crystals, leading to enhanced electromagnetic (EM) radiation. Experiments at Mainz Mikrotron (MAMI) involved PWO, BGO, and CsI crystals…
Among ultrawide bandgap semiconductors, beta-Ga2O3 is particularly promising for high power and frequency applications. For devices, n-type concentrations above 10^19 cm^-3 are required. Ge is a promising alternative n-type dopant with an…
An effect of alloying of the monoclinic beta- Ga2O3 with Al2O3 and In2O3 on the photoluminescent, thermoluminescent and persistent luminescent properties of Cr3+ ions has been comprehensively investigated. For this purpose, various series…
Density functional theory methods are applied to investigate the properties of the new superconductor $\beta$-YbAlB$_4$ and its polymorph $\alpha$-YbAlB$_4$. We utilize the generalized gradient approximation + Hubbard U (GGA+U) approach…
Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide ($\beta$-Ga$_2$O$_3$) have led to the commercialization of large-area beta-Ga$_2$O$_3$ substrates with subsequent epitaxy on (010)…
We report the growth of electrically-resistive vanadium-doped beta-Ga2O3 single crystals via the optical floating zone technique. By carefully controlling the growth parameters V-doped crystals with very high electrical resistivity compared…
In this study, we investigate the ion-irradiation-induced phase transition in gallium oxide (Ga2O3) from the $\beta$ to the $\gamma$ phase, the role of defects during the transformation, and the quality of the resulting crystal structure.…
Ga$_2$O$_3$ is a wide-bandgap material of interest for a wide variety of devices, many of these requiring heterostructures, for instance to achieve carrier confinement. A common method to create such heterostructures is to alloy with…
Ultrawide-bandgap semiconductors are attractive for solar-blind ultraviolet (UV) detection owing to their intrinsically low noise and high spectral selectivity, yet their deployment in large-area, high-density electronic imaging systems…
Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga2O3) which is a promising ultra-wide bandgap semiconductor exhibiting phase instability for high enough strain/disorder levels.…
The band structure, optical and defects properties of Ba_{2}TeO are systematically investigated using density functional theory with a view to understanding its potential as an optoelectronic or trans- parent conducting material. Ba_{2}TeO…
We present an investigation into beam steering and radiation emission by sub-GeV electrons traversing bent silicon crystals. Using 855, 600, and 300~MeV electron beams at the Mainz Microtron (MAMI), we explored orientational coherent…
In this work, we report the effects of calcination temperature on structural, dielectric, semiconducting and optical properties of YFeO3 nanoparticles prepared by a high energy ball milling process. The structural analysis of the X-ray…
Ultra-wide bandgap (UWBG) semiconductors promise to revolutionize power electronics, yet a fundamental understanding of their interfacial electronic structure has been hindered by the absence of direct experimental observation. Here, we…
Ultrawide bandgap semiconductor gallium oxide (Ga2O3) and its polymorphs have recently attracted increasing attention across physics, materials science, and electronics communities. In particular, the self-organized formation of the…
The suitability of Ti as a band gap modifier for $\alpha$-Ga$_2$O$_3$ was investigated, taking advantage of the isostructural {\alpha}-phases and high band gap difference between Ti$_2$O$_3$ and Ga$_2$O$_3$. Films of Ti:Ga$_2$O$_3$, with a…
A theoretical study of Bragg diffraction by an enantiomorphic pair of structures should apply to patterns gathered on beta-Mn using resonance enhanced x-ray diffraction. The chiral polymorph of manganese, and structurally related compounds,…
We investigate the crystal structure of YTiO3 at high pressures up to 30 GPa by synchrotron x-ray powder diffraction (T = 295 K). The variation of the Ti--O bond lengths with pressure evidences a distinct change in the distortion of the…
The $\beta$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $\beta$-Ga$_2$O$_3$ has…