Biexciton emission properties were studied in a single GaAs quantum well semiconductor planar microcavity by photoluminescence measurements at low temperatures. At high pump intensity a bipolariton emission appears close to the lower polariton mode. This new mode appears when we detune the cavity resonance out of the lower polariton branch, showing a laser like behavior. Very small lines widths were measured, lying below 110 μeV and 150 μeV for polariton and bipolariton emission respectively. The input/output power (I/O) measurements show that the bipolariton emission has a weaker coupling efficiency compared to previous results for polariton emission. Simultaneous photoluminescence and near field measurements show that the polariton and bipolariton emission are spectrally and spatially separated.
@article{arxiv.cond-mat/0509068,
title = {Bipolariton laser emission from a GaAs microcavity},
author = {L. M. Moreira and J. C. Gonzalez and A. G. Oliveira and F. M. Matinaga},
journal= {arXiv preprint arXiv:cond-mat/0509068},
year = {2007}
}
Comments
4 pages, 3 figures, initial results on bipolaritons in microcavities