We present a study by Scanning Tunneling Microscopy, supported by ab initio calculations, of the interaction between graphene and monolayer (semiconducting) PtSe2 as a function of the twist angle θ between the two layers. We analyze the PtSe2 contribution to the hybrid interface states that develop within the bandgap of the semiconductor to probe the interaction. The experimental data indicate that the interlayer coupling increases markedly with the value of θ, which is confirmed by ab initio calculations. The moir\'e patterns observed within the gap are consistent with a momentum conservation rule between hybridized states, and the strength of the hybridization can be qualitatively described by a perturbative model.
@article{arxiv.2311.08165,
title = {Angular dependence of the interlayer coupling at the interface between two dimensional materials 1T-PtSe$_2$ and graphene},
author = {P. Mallet and F. Ibrahim and K. Abdukayumov and A. Marty and C. Vergnaud and F. Bonell and M. Chshiev and M. Jamet and J-Y. Veuillen},
journal= {arXiv preprint arXiv:2311.08165},
year = {2023}
}