Analytical view on tunnable electrostatic quantum swap gate in tight-binding model
Abstract
Generalized electrostatic quantum swap gate implemented in the chain of 2 double coupled quantum dots using single electron in semiconductor is presented in tight-binding simplistic model specifying both analytic and numerical results. The anticorrelation principle coming from Coulomb electrostatic repulsion is exploited in single electron devices. The formation of quantum entanglement is specified and supported by analytical results. The difference between classical and quantum picture is given. The correlations between geometry of quantum structures and entanglement dynamics are shown in analytical way. Effective wavefunction of single electrons is extracted from 2 electron electrostatic interactions. The presented results have its significance in cryogenic CMOS quantum technologies that gives perspective of implementation of semiconductor quantum computer on massive scale. Keyword: electrostatic quantum swap gate, entanglement, anticorrelation, tight-binding model, two-body wavefunction, correlation-anticorrelation crossover, density matrix of 2 electron system, single electron devices, coupled quantum dots
Cite
@article{arxiv.2001.02513,
title = {Analytical view on tunnable electrostatic quantum swap gate in tight-binding model},
author = {Krzysztof Pomorski},
journal= {arXiv preprint arXiv:2001.02513},
year = {2020}
}
Comments
44 pages, 10 figures. arXiv admin note: text overlap with arXiv:1907.03180