Analytic view on N body interaction in electrostatic quantum gates and decoherence effects in tight-binding model
Abstract
Analytical solutions describing quantum swap and Hadamard gate are given with the use of tight-binding approximation. Decoherence effects are described analytically for two interacting electrons confined by local potentials with use of tight-binding simplistic model and in Schroedinger formalism with omission of spin degree of freedom. The obtained results can be generalized for the case of N electrostatically interacting quantum bodies confined by local potentials (N-qubit) system representing any electrostatic quantum gate with N1/N-N1 inputs/outputs. The mathematical structure of system evolution with time is specified. Index Terms: quantum computation, entanglement, single-electron devices, position-dependent qubit, Q-Swap Gate, quantum CMOS
Cite
@article{arxiv.1912.01205,
title = {Analytic view on N body interaction in electrostatic quantum gates and decoherence effects in tight-binding model},
author = {Krzysztof Pomorski},
journal= {arXiv preprint arXiv:1912.01205},
year = {2019}
}
Comments
28 pages, 5 figures