English

A phonon scattering assisted injection and extraction based terahertz quantum cascade laser

Mesoscale and Nanoscale Physics 2015-06-03 v1

Abstract

A novel lasing scheme for terahertz quantum cascade lasers, based on consecutive phonon-photon-phonon emissions per module, is proposed and experimentally demonstrated. The charge transport of the proposed structure is modeled using a rate equation formalism. An optimization code based on a genetic algorithm was developed to find a four-well design in the GaAs/Al0.25Ga0.75As\mathrm{GaAs/Al_{0.25}Ga_{0.75}As} material system that maximizes the product of population inversion and oscillator strength at 150 K. The fabricated devices using Au double-metal waveguides show lasing at 3.2 THz up to 138 K. The electrical characteristics display no sign of differential resistance drop at lasing threshold, which suggests - thanks to the rate equation model - a slow depopulation rate of the lower lasing state, a hypothesis confirmed by non-equilibrium Green's function calculations.

Keywords

Cite

@article{arxiv.1201.4189,
  title  = {A phonon scattering assisted injection and extraction based terahertz quantum cascade laser},
  author = {E. Dupont and S. Fathololoumi and Z. R. Wasilewski and G. Aers and S. R. Laframboise and M. Lindskog and A. Wacker and D. Ban and H. C. Liu},
  journal= {arXiv preprint arXiv:1201.4189},
  year   = {2015}
}

Comments

11 pages, 10 figures

R2 v1 2026-06-21T20:07:21.228Z