Related papers: Electrically addressing a single self-assembled qu…
A gate-defined quantum dot in an InAs nanowire is fabricated on top of a quantum point contact realized in a two-dimensional electron gas. The strong coupling between these two quantum devices is used to perform time-averaged as well as…
We demonstrate room temperature visible wavelength photoluminescence from In0.5Ga0.5As quantum dots embedded in a GaP membrane. Time-resolved above band photoluminescence measurements of quantum dot emission show a biexpontential decay with…
The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots…
We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular-beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only…
We demonstrate optically detected spin resonance of a single electron confined to a self-assembled quantum dot. The dot is rendered dark by resonant optical pumping of the spin with a coherent laser. Contrast is restored by applying a radio…
The local interaction of charges and light in organic solids is the basis of distinct and fundamental effects. We here observe, at the single molecule scale, how a focused laser beam can locally shift by hundreds-time their natural…
Semiconductor-based emitters of pairwise photonic entanglement are a promising constituent of photonic quantum technologies. They are known for the ability to generate discrete photonic states on-demand with low multiphoton emission,…
A fundamental component of an integrated quantum optical circuit is an on-chip beam-splitter operating at the single-photon level. Here we demonstrate the monolithic integration of an on-demand quantum emitter in the form of a single…
We present an oxide aperture microcavity with embedded quantum dots that utilizes a three contact design to independently tune the quantum dot wavelength and birefringence of the cavity modes. A polarization splitting tuning of $\sim$5 GHz…
We have incorporated an aluminum single electron transistor (SET) directly on top of a vertical quantum dot, enabling the use of the SET as an electrometer that is extremely responsive to the motion of charge into and out of the dot. Charge…
A single-atom 'double-slit' experiment is realized by photo-ionizing Rubidium atoms using two independent low power lasers. The photoelectron wave of well-defined energy recedes to the continuum either from the 5P or 6P states in the same…
Tunneling excitations of electrons in dry-etched modulation-doped AlGaAs/GaAs coupled quantum dots (QDs) are probed by resonant inelastic light scattering. A sequence of intra- and intershell excitations are found at energies determined by…
We present a novel type of single photon source in solid state, based on the coherent laser light scattering by a single InAs quantum dot. We demonstrate that the coherence of the emitted single photons is tailored by the resonant…
We perform spatial point analysis of InAs quantum dot nucleation sites and surface reconstruction domain pattern on an InAs wetting layer, giving insights for quantum dot nucleation mechanism. An InAs wetting layer grown to 1.5 monolayers…
Quantum dots defined in carbon nanotubes are a platform for both basic scientific studies and research into new device applications. In particular, they have unique properties that make them attractive for studying the coherent properties…
We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The…
Optical properties of large arrays of isolated quantum dots are discussed in order to interpret the existent photoluminescence data. The presented theory explains the large observed shift between the lowest emission and absorption energies…
A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is…
We review a number of recent experiments which are probing ground state and excitations of few-electron systems in self-assembled InAs quantum dots. Far-infrared spectroscopy, together with local as well as large-scale capacitive probing…
We applied low temperature diffraction limited confocal optical microscopy to spatially resolve, and spectroscopically study photoluminescence from single self-assembled semiconductor quantum dots. Using selective wavelength imaging we…