Related papers: Electron g-factor Engineering in III-V Semiconduct…
We demonstrate the epitaxial growth of optical-quality electrically-gated III-V ferromagnetic quantum structures. Photoluminescence spectroscopy reveals that initially unpolarized photoexcited holes in a GaAs quantum well become…
The determination and control of the electron $g$-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the $g$-factor on…
A central challenge for scalable quantum networks is the realization of coherent interfaces between stationary qubits and telecom-band photonic qubits for long-distance entanglement distribution. Semiconductor quantum dots emitting at…
Here we show the room temperature integrated detection of the helicity of photons with 1300 nm wavelength, via spin- photodiodes based on fully epitaxial Fe/MgO/Ge(001) heterostructures. These devices convert the photon helicity in a…
The helicity of a circularly polarized light beam may be determined by the spin direction of photo-excited electrons in a III-V semiconductor. We present a theoretical demonstration how the direction of the ensuing electron spin…
We present how a phase factor is generated when an electric dipole moves along a closed trajectory inside a magnetic field gradient. The similarity of this situation with charged particles in a magnetic field can be employed to simulate…
It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the…
We address spin properties and spin dynamics of carriers and charged excitons in CdSe/CdS colloidal nanoplatelets with thick shells. Magneto-optical studies are performed by time-resolved and polarization-resolved photoluminescence,…
In this paper we show that it is possible to switch the spin polarization of the photocurrent signal obtained from a single self-assembled quantum dot photodiode under the effect of elliptically polarized light by just increasing the light…
Time-resolved optical measurements of electron-spin dynamics in a (110) GaAs quantum well are used to study the consequences of a strongly anisotropic electron g-tensor, and the origin of previously discovered all-optical nuclear magnetic…
We investigate entanglement transfer from a system of two spin-entangled electron-hole pairs, each placed in a separate single mode cavity, to the photons emitted during their recombination process. Dipole selection rules and a splitting…
The orbital and spin magnetization of a cavity-embedded quantum dot array defined in a GaAs heterostructure are calculated within quantum-electrodynamical density-functional theory (QEDFT). To this end a gradient-based exchange-correlation…
We show that the g-factor and the spin-flip time T_{1} of a heterojunction quantum dot is very sensitive to the band-bending interface electric field even in the absence of wave function penetration into the barrier. When this electric…
We consider spin-lattice relaxation processes for electrons trapped in lateral Si quantum dots in a $[001]$ inversion layer. Such dots are characterized by strong confinement in the direction perpendicular to the surface and much weaker…
A polarization preserving quantum nondemolition photodetector is proposed based on nonlinearities obtainable through quantum coherence effects. An atomic level scheme is devised such that in the presence of strong linearly polarized drive…
The electron g-factor measured in a quantum point contact by source-drain bias spectroscopy is significantly larger than its value in a two-dimensional electron gas. This enhancement, established experimentally in numerous studies, is an…
The electron and hole g factors are the key quantities for the spin manipulations in semiconductor quantum nanostructures. However, for the individual nanostructures, the separate determination including the signs of those g factors is…
A microscopic picture of electron-electron pair scattering in single mode quantum wires is introduced which includes electron spin. A new source of `excess' noise for hot carriers is presented. We show that zero magnetic field `spin'…
Studies of spin manipulation in semiconductors has benefited from the possibility to grow these materials in high quality on top of optically active III-V systems. The induced electroluminescence in these layered semiconductor…
Inter-band photo-excitation of electron states with the twisted photons in GaAs, a direct band-gap bulk semiconductor, is considered theoretically. Assuming linearity of the quantum transition amplitudes and applying Wigner-Eckart theorem,…