Related papers: A proposal for a new type of thin-film field-emiss…
The cold field electron emission from metallic nanowall array is investigated theoretically. Via conformal mapping method, analytic formulas of tunneling barrier, edge field enhancement factor, transmission coefficient, and area emission…
Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-quality, ultrathin high-\k{appa} dielectrics that fully meet…
Two-dimensional (2D) van der Waals semiconductors show promise for atomically thin flexible and transparent optoelectronic devices in future technologies.However, developing high-performance field-effect transistors (FETs) based on 2D…
We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate,…
Significant field emission is found theoretically possible from nanorods of semiconductors of wide energy band gaps. If the nanorod has a thin surface layer containing a large number of localized states, a part of nanorod can exhibit an…
Radiation-hard silicon sensors used in high-energy physics require a high electric field and are susceptible to surface breakdown. This study aims to improve the understanding of the underlying mechanisms by developing new methods to probe…
The complete design, fabrication, and performance evaluation of a compact, single cell, $X$-band ($\sim$9 GHz) electron injector based on a field emission cathode (FEC) are presented. A pulsed electron beam is generated by a 10's of kW…
At Argonne National Laboratory, we are developing hard X-ray (2 to 20 keV) Transition Edge Sensor (TES) arrays for beamline science. The significantly improved energy resolution provided by superconducting detectors compared to…
Topological insulators (TIs) have been considered as promising candidates for next generation of electronic devices due to their topologically protected quantum transport phenomena. In this work, a scheme for atomic-scale field effect…
Because of their strong excitonic photoluminescence (PL) and electroluminescence (EL), together with an excellent electronic tunability, transition metal dichalcogenide (TMD) semiconductors are promising candidates for novel optoelectronic…
We propose that the topological magneto-electric (ME) effect, a hallmark of topological insulators (TIs), can be realized in thin films of TIs in the $\nu=0$ quantum Hall state under magnetic field or by doping two magnetic ions with…
Point sources exhibit low threshold electron emission due to local field enhancement at the tip. The development and implementation of tip emitters have been hampered by the need to position them sufficiently apart to achieve field…
We have succeeded in growing ferromagnetic metals (Co, Fe, and NiFe)/ Al2O3/ AlGaAs heterostructures with homogeneous and flat interfaces. The electro-luminescence (EL) from the light emitting diode (LED) consisting of the…
An exact solution for electromagnetic wave diffraction at the junction of two-dimensional electron systems (2DES) is obtained and analyzed for electric field polarized along the edge. A special emphasis is paid to the metal-contacted and…
The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental…
A power efficient and stable field emission (FE) has been reported here from Nickel Oxide nanostructures. Modification in device geometry and surface micro- (nano-) structure has been found helpful in addressing the bottlenecks in achieving…
Transition Edge Sensors are ultra-sensitive superconducting detectors with applications in many areas of research, including astrophysics. The device consists of a superconducting thin film, often with additional normal metal features, held…
The ELISE test facility hosts a RF negative ion source, equipped with an extraction system which should deliver half the current foreseen for the ITER Neutral Beam Injector, keeping the ratio of co-extracted electrons to ions below 1. An…
The conductivity of organic semiconductors is measured {\it in-situ} and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. The depletion layer thickness can be directly determined as…
The electromagnetic modes and their field distributions are evaluated for a dielectric cylindrical structure embedded in another dielectric, with a thin metallic film at the cylinder/dielectric interface. These modes provide energy…