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Related papers: The effects of radiation on Gallium Arsenide radia…

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The radiation damage in 200 um thick Schottky diodes made on semi-insulating (SI) undoped GaAs Liquid Encapsulated Czochralski (LEC) bulk material with resistivities between 0.4 and 8.9*10E7 Ohm*cm were studied using alpha-spectroscopy,…

High Energy Physics - Experiment · Physics 2007-05-23 M. Rogalla , Th. Eich , N. Evans , S. Joost , M. Kienzle , R. Geppert , R. Goeppert , R. Irsigler , J. Ludwig , K. Runge , Th. Schmid

The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical…

Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC…

Instrumentation and Detectors · Physics 2023-10-04 Andreas Gsponer , Philipp Gaggl , Jürgen Maier , Richard Thalmeier , Simon Emanuel Waid , Thomas Bergauer

To face the higher levels of radiation due to the 10-fold increase in integrated luminosity during the High-Luminosity LHC, the CMS detector will replace the current Calorimeter Endcap (CE) using the High-Granularity Calorimeter (HGCAL)…

Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and…

Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community. 4H-Silicon Carbide (SiC), especially, is an attractive…

Instrumentation and Detectors · Physics 2024-12-11 Andreas Gsponer , Philipp Gaggl , Jürgen Burin , Simon Waid , Thomas Bergauer

Here we report the results of an investigation into the effects of ionizing radiation on commercial-off-the-shelf InGaAs and Si photodiodes. The photodiodes were exposed to 30, 52, and 98 MeV protons with fluences ranging from 10^8 -…

Instrumentation and Methods for Astrophysics · Physics 2012-10-11 Brian J. Baptista , Stuart L. Mufson

The expected increase of total integrated luminosity by a factor of ten at the HL-LHC compared to the design goals for LHC essentially eliminates the safety factor for radiation hardness realized at the current cold amplifiers of the ATLAS…

Instrumentation and Detectors · Physics 2019-08-13 Martin Nagel

The expected increase of total integrated luminosity by a factor ten at the HL-LHC compared to the design goals for LHC essentially eliminates the safety factor for radiation hardness realized at the current cold amplifiers of the ATLAS…

Instrumentation and Detectors · Physics 2013-01-17 Martin Nagel

To face the higher levels of radiation due to the 10-fold increase in integrated luminosity during the High-Luminosity LHC, the CMS detector will replace the current Calorimeter Endcap (CE) using the High-Granularity Calorimeter (HGCAL)…

The high-luminosity upgrade of the ATLAS and CMS experiments includes dedicated sub-detectors to perform the time-stamping of minimum ionizing particles (MIPs). These detectors will be exposed up to fluences in the range of 1.5 - 2.5e15…

Instrumentation and Detectors · Physics 2023-06-22 Esteban Curras Rivera , Alessandro La Rosa , Michael Moll , Fasih Zareef

The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…

A gallium arsenide detector was tested with a beam of 70GeV pions at the {\sf SPS} at CERN. The detector utilises a novel biasing scheme which has been shown to behave as expected. The detector has a pitch of 50$\mu$m and therefore an…

High Energy Physics - Experiment · Physics 2007-05-23 S. Gowdy

Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a…

Silicon carbide (SiC) planar PiN diodes from two different manufacturers were irradiated with 252.7 MeV protons from a medical synchrotron. Over the course of two 8h irradiation shifts, the samples were exposed to increasing fluences…

Pixel detectors are used in the innermost part of the multi purpose experiments at LHC and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The…

Instrumentation and Detectors · Physics 2010-11-30 T. Rohe , A. Bean , W. Erdmann , H. -C. Kaestli , S. Khalatyan , B. Meier , V. Radicci , J. Sibille

We study the radiation effects of the Low Gain Avalanche Detector (LGAD) sensors developed by the Institute of High Energy Physics (IHEP) and the Novel Device Laboratory (NDL) of Beijing Normal University in China. These new sensors have…

Instrumentation and Detectors · Physics 2021-07-07 Yuhang Tan , Tao Yang , Suyu Xiao , Kewei Wu , Lei Wang , Yaoqian Li , Zhenwei Liu , Zhijun Liang , Dejun Han , Xingan Zhang , Xin Shi

Several thin Low Gain Avalanche Detectors from Hamamatsu Photonics were irradiated with neutrons to different equivalent fluences up to $\Phi_{eq}=3\cdot10^{15}$ cm$^{-2}$. After the irradiation they were annealed at 60$^\circ$C in steps to…

Instrumentation and Detectors · Physics 2020-06-01 G. Kramberger. V. Cindro , A. Howard , Z. Kljun , I. Mandic , M. Mikuz

Pixel detectors are used in the innermost part of multi purpose experiments at the Large Hadron Collider (LHC) and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of…

Instrumentation and Detectors · Physics 2010-01-21 T. Rohe , J. Acosta , A. Bean , S. Dambach , W. Erdmann , U. Langenegger , C. Martin , B. Meier , V. Radicci , J. Sibille , P. Trueb

We present a gated silicon single photon detector based on a commercially available avalanche photodiode. Our detector achieves a photon detection efficiency of 45\pm5% at 808 nm with 2x 10^-6 dark count per ns at -30V of excess bias and…

Instrumentation and Detectors · Physics 2015-06-11 T. Lunghi , E. Pomarico , C. Barreiro , D. Stucki , B. Sanguinetti , H. Zbinden
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