Related papers: Feasibility of an electron-based crystalline undul…
We report on the measurements of the spectra of gamma radiation generated by 855 MeV electrons in bent silicon and germanium crystals at MAMI (MAinzer MIkrotron). The crystals were 15 {\mu}m thick along the beam direction to ensure high…
We report on the results of theoretical simulations of the electron channeling in a bent silicon crystal. The dynamics of ultra-relativistic electrons in the crystal is computed using the newly developed part [1] of the MBN Explorer package…
We report the results of theoretical and numerical analysis of the crystalline undulators planned to be used in the experiments which are the part of the ongoing PECU project [1]. The goal of such an analysis was to define the parameters…
We investigate, both analytically and numerically, the influence of the dechanneling process on the parameters of undulator radiation generated by ultra-relativistic positron channelling along a crystal plane, which is periodically bent.…
We present an investigation into beam steering and radiation emission by sub-GeV electrons traversing bent silicon crystals. Using 855, 600, and 300~MeV electron beams at the Mainz Microtron (MAMI), we explored orientational coherent…
We analyze numerically the radiation and channeling properties of ultrarelativistic electrons and positrons propagating through a periodically bent diamond crystal grown on a straight single-crystal diamond substrate. Such systems can be…
The usage of channelling radiation arising from a high energy electron beam traversing a crystal for the production of an intense low emittance muon beam is investigated. The optimal energy and divergence of the electron beam are computed…
The propagation of a modulated positron beam in a planar crystal channel is investigated. It is demonstrated that the beam preserves its modulation at sufficiently large penetration depths which opens the prospect of using a crystalline…
The method of relativistic molecular dynamics is applied for accurate computational modelling and numerical analysis of the channelling phenomena for 855 MeV electrons in bent oriented silicon (111) crystal. Special attention is devoted to…
We predict peculiar changes in spectral distributions of radiation emitted by ultra-relativistic positrons and electrons in periodically bent crystals with variation of the bending amplitude. It is shown that the changes, being sensitive to…
A version for intense $\gamma $-ray radiation based on the multiphoton scattering of strong laser radiation on relativistic particle beam channeled in a crystal is proposed. The scheme is considered when the incident laser beam and charged…
A new scheme for amplification of coherent gamma rays is proposed. The key elements are crystalline undulators - single crystals with periodically bent crystallographic planes exposed to a high energy beam of charged particles undergoing…
Planar channeling of 855 MeV electrons and positrons in straight and bent tungsten (110) crystal is simulated by means of the \MBNExplorer software package. The results of simulations for a broad range of bending radii are analyzed in terms…
In this study, we present a comprehensive quantitative analysis of the radiation emitted by 855 MeV electrons propagating through an oriented diamond hetero-crystal. The crystal consists of two distinct segments: (i) a straight…
Preliminary results of numerical simulations of electron and positron channeling and emission spectra are reported for straight, uniformly bent and periodically bent silicon crystal. The projectile trajectories are computed using the newly…
Simulations of electron and positron channelling in a crystalline undulator with a small amplitude and a short period (A Kostyuk, Phys. Rev. Lett. 110 (2013) 115503) were repeated by V G Bezchastnov, A V Korol and A V Solov'yov (J. Phys. B:…
In this paper we present the results of a systematic numerical analysis of the channeling properties of electrons and positrons in oriented straight and periodically bent diamond(110) crystals. We analyse dependence of the intensity of the…
A 4-period diamond undulator with a thickness of 20 $\mu$m was produced with the method of Chemical Vapour Deposition (CVD), applying boron doping, on a straight diamond crystal with an effective thickness of 165.5 $\mu$m. A planar (110)…
The results of numerical simulation of the channeling of ultra-relativistic 270 MeV electrons and positrons in a diamond crystal are presented. Using the MBN Explorer package, the trajectories of the have been determined of the particles…
Results of numerical simulations of electron channeling and emission spectra are reported for straight and uniformly bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer…