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We report on the analysis of electroabsorption in thin GaAs/Al$_{0.3}$Ga$_{0.7}$As nanophotonic waveguides with an embedded $p$-$i$-$n$ junction. By measuring the transmission through waveguides of different lengths, we derive the…

The sensitivity of 2nd and 3rd generations of interferometric gravitational wave detectors will be limited by thermal noise of the test-mass mirrors and highly reflective coatings. Recently developed crystalline coatings show a promising…

One of the basic optoelectronic characteristics is the absorption of any optoelectronic device or material. We present the characteristics of pure GaAs and the deviation of ideal spectra. Due to crystal defects, vacancies, impurities, etc.,…

Materials Science · Physics 2024-01-17 Subarna Alam , Mohammad Jahangir Alam

Optical characterization of AlGaAs microdisk resonant cavities with a quantum dot active region is presented. Direct passive measurement of the optical loss within AlGaAs microdisk resonant structures embedded with InAs/InGaAs…

Nonlinear absorption can limit the efficiency of nonlinear optical devices. However, it can also be exploited for optical limiting or switching applications. Thus, characterization of nonlinear absorption in photonic devices is imperative.…

The absorption and variation of the velocity of a surface acoustic wave of frequency $f$= 30 MHz interacting with two-dimensional electrons are investigated in GaAs/AlGaAs heterostructures with an electron density $n=(1.3 - 2.8) \times…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 I. L. Drichko , A. M. Diakonov , V. V. Preobrazenskiy , I. Yu. Smirnov , A. I. Toropov

We considered intersubband electron transitions in an array of one-dimensional chains of spherical quantum dots in the GaAs/Al$_{x}$Ga$_{1-x}$As semiconductor system. The absorption coefficient caused by these transitions was calculated…

Strongly Correlated Electrons · Physics 2017-06-23 V. I. Boichuk , I. V. Bilynskyi , R. I. Pazyuk

The absorption coefficient for surface acoustic waves in a piezoelectric insulator in contact with a GaAs/AlGaAs heterostructure (with two-dimensional electron mobility $\mu= 1.3\times 10^5 cm^2/V\cdot s)$ at T=4.2K) via a small gap has…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 I. L. Drichko , A. M. Diakonov , A. M. Kreshchuk , T. A. Polyanskaya , I. G. Savel'ev , I. Yu. Smirnov , A. V. Suslov

The quality factor (Q), mode volume (Veff), and room-temperature lasing threshold of microdisk cavities with embedded quantum dots (QDs) are investigated. Finite element method simulations of standing wave modes within the microdisk reveal…

We present high-reflectivity substrate-transferred single-crystal GaAs/AlGaAs interference coatings at a center wavelength of 4.54 um with record-low excess optical loss below 10 parts per million. These high-performance mirrors are…

We demonstrate incoherent broadband cavity enhanced absorption spectroscopy in the mid-infrared wave- length range from 3000 to 3450 nm using an all-fiber based supercontinuum source. Multi-components gas detection is performed and…

Instrumentation and Detectors · Physics 2017-09-13 Caroline Amiot , Antti Aalto , Piotr Ryczkowski , Juha Toivonen , Goëry Genty

The absorption coefficient for surface acoustic wave $\Gamma$ and variation in the wave velocity $\Delta V/V$ were measured in GaAs/AlGaAs heterostructures; the above quantities are related to interaction of the wave with two-dimensional…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 I. L. Drichko , A. M. Diakonov , I. Yu. Smirnov , A. I. Toropov

We present a systematic characterization of fluctuations in submicron Hall devices based on GaAs/AlGaAs two-dimensional electron gas heterostructures at temperatures between 1.5 K to 60 K. A large variety of noise spectra, from 1/f to…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Yongqing Li , Cong Ren , Peng Xiong , Stephan von Molnar , Yuzo Ohno , Hideo Ohno

We compare the quality factor values of the whispery gallery modes of microdisks incorporating GaN quantum dots (QDs) grown on AlN and AlGaN barriers by performing room temperature photoluminescence (PL) spectroscopy. The PL measurements…

The sub-bandgap absorption and ultrafast relaxation in a GaAs/ErAs/GaAs heterostructure are reported. The infrared absorption and 1550 nm-excited ultrafast photo-response are studied by Fourier transform infrared (FTIR) spectrometry and…

Materials Science · Physics 2021-03-01 Kedong Zhang , Yiwen Li , Yifeng Ren , Xing Fan , Chen Li , Jianfei Li , Yafei Meng , Yu Deng , Fengqiu Wang , Hong Lu , Yan-Feng Chen

High-quality planar cavities with low-absorption mirrors based on $Al_{0.2}Ga_{0.8}As/Al_{0.9}Ga_{0.1}As$ layers demonstrate continuous wave lasing at a wavelength of 956 nm. At 300 K, the threshold power density and quality-factor at the…

We investigated elastic loss in GaAs/AlGaAs multilayers to help determine the suitability of these coatings for future gravitational wave detectors. We measured large ($\approx 70$-mm diameter) substrate-transferred crystalline coating…

This study is an optimization of GaAs and Al$_{0.55}$Ga$_{0.45}$As growth on GaAs (111)B substrates with a surface misorientation of 2{\deg} towards [$\bar{2}$11], aiming to enhance surface morphology. For quantum optical metasurfaces…

Materials Science · Physics 2025-03-04 T. Blaikie , M. C. Tam , S. Stich , M. Belkin , Z. R. Wasilewski

Using a custom-built scanning system, we generated maps of birefringence on reflection at $\lambda=1064$~nm from single-crystal GaAs/Al$_{0.92}$Ga$_{0.08}$As Bragg reflectors (henceforth ``AlGaAs coatings''). Ten coatings were bonded to…

Metasurface based super absorbers exhibit near unity absorbance. While the absorption peak can be tuned by the geometry/size of the sub-wavelength resonator, broadband absorption can be obtained by placing multiple resonators of various…

Materials Science · Physics 2019-04-03 Arvind Nagarajan , Kumar Vivek , Manav Shah , Venu Gopal Achanta , Giampiero Gerini
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