Related papers: Wavelength- and material-dependent absorption in G…
We have measured time-resolved the photon storage time and the quality factor of an ultrafast photonic cavity using an autocorrelator. The cavity consists of a $\lambda$-thick GaAs layer sandwiched between GaAs/AlAs distributed Bragg…
An optoelectronic optimization was carried out for an AlGaAs solar cell containing (i) an n-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd-Ge-Au backcontacts.…
We present an experimental method to determine the refractive index of $Al_{x}Ga_{1-x}As$ (x = 0.0 - 0.5) from 300 K to 4 K across the 500 - 1100 nm wavelength range. The values are extracted from spectroscopically observed microcavity…
High absorption in a wide frequency band has attracted considerable interest since their potential applications in frequency spectrum imaging systems and anti-radar cloaking. In this paper, a polarization-independent, ultra-broadband and…
We demonstrate THz intersubband absorption (15.6-26.1 meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift…
Wave absorption metamaterials have been an enduring topic over the past two decades, propelled not only by novel scientific advances, but also by their extensive application potential. In this review, we aim to provide some general insights…
Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a…
A theoretical study of Al(1-x)Ga(x)N, based on full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap, optical properties and non-linear behavior of the compound with the variation of Ga…
Semiconductor nanowires are attractive for photovoltaic applications because light absorption can be enhanced compared to planar layers due to the more complex coupling of light with wavelength-scale matter. However, experimentally it is…
Utilizing three-terminal tunnel emission of ballistic electrons and holes, we have developed a method to self-consistently measure the bandgap of semiconductors and band discontinuities at semiconductor heterojunctions without any…
Achieving uniform nanowire size, density, and alignment across a wafer is challenging, as small variations in growth parameters can impact performance in energy harvesting devices like solar cells and photodetectors. This study demonstrates…
We present results of an extensive suite of numerical simulations that probe square-tiled microwave absorber performance as a function of material properties, frequency, geometry, and unit cell size. The work, which probes both specular…
Complete absorption of electromagnetic waves is paramount in today's applications, ranging from photovoltaics to cross-talk prevention into sensitive devices. In this context, we use a genetic algorithm (GA) strategy to optimize absorption…
The influence of Ga incorporation into cubic In$_2$O$_3$ on the electronic and vibrational properties is discussed for (In$_{1-x}$,Ga$_x$)$_2$O$_3$ alloy films grown by molecular beam epitaxy. Using spectroscopic ellipsometry, a linear…
We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors $ > 2.8\times10^{5}$ and mode volumes $< 10 (\lambda/n)^3$, and study their nonlinear and optomechanical properties. For optical intensities up…
Applications in quantum information processing and photon detectors are stimulating a race to produce the highest possible quality factor on-chip superconducting microwave resonators. We have tested the surface-dominated loss hypothesis by…
We investigate the resolution and absorption losses of a Ag/GaP multilayer superlens. For a fixed source to image distance the resolution is independent of the position of the lens but the losses depend strongly on the lens placement. The…
The need for semiconductor technology for crystalline silicon of the highest purity and homogeneity has provided samples exhibiting low optical absorption in the infrared range. Such silicon has become the basis for photonic elements in the…
In a superconductor absorption of photons with an energy below the superconducting gap leads to redistribution of quasiparticles over energy and thus induces a strong non-equilibrium quasiparticle energy distribution. We have measured the…
Spectra of the degenerate two-photon absorption coefficient $\beta(\omega)$, anisotropy parameter $\sigma(\omega)$, and dichroism parameter $\delta(\omega) = \big[\sigma(\omega) + 2\eta(\omega)\big]/2$ of crystalline 110-cut GaAs, GaP, and…