Related papers: Strain induced half-metal to semiconductor transit…
Influence of disorder on the ferromagnetic phase transition in diluted (III,Mn)V semiconductors is investigated analytically. The regime of small disorder is addressed, and the enhancement of the critical temperature by disorder is found…
Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in GaMnAs films, known to be hole-mediated, can be modified by He ion irradiation. The…
Pressure dependence of electronic structures and thermoelectric properties of $\mathrm{Mg_2Sn}$ are investigated by using a modified Becke and Johnson (mBJ) exchange potential, including spin-orbit coupling (SOC). The corresponding value of…
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a…
Finite temperature effects have a pronounced impact on the transport properties of solids. In magnetic systems, besides the scattering of conduction electrons by impurities and phonons, an additional scattering source coming from the…
A major challenge for the next generation of spintronics devices is the implementation of ferromagnetic-semiconductor thin films as spin injectors and detectors. Spin-polarised carrier injection cannot be accomplished efficiently from…
The effect of strain on the resistivity and thermopower of ferromagnetic manganites has been examined based on the model that incorporates the electron-lattice interaction through the Jahn-Teller effect and an effective hopping determined…
The electronic structure and magnetic exchange interactions in pure and V-doped Fe16N2 are studied within the framework of density functional theory. The Curie temperatures were obtained with both mean field approximation (MFA) as well as…
We report on the temperature and field driven metal-insulator transition in disordered Ge:Mn magnetic semiconductors accompanied by magnetic ordering, magnetoresistance reaching thousands of percents and suppression of the extraordinary…
We studied the mechanism of half-metallicity (HM) formation in transition metal doped (TM) conjugated carbon based structures by first-principles electronic structure simulations. It is found that the HM is a rather complex phenomenon,…
Based on ab initio calculations of Ga_{1-x}Mn_xN_yAs_{1-y} and Ga_{1-x}Mn_xC_yAs_{1-y}, we propose a new codoping method to enhance the Curie temperature T_c of diluted magnetic semiconductors. The solubility of Mn can be increased up to…
We report on the magnetic and magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As modified by Ga$^{+}$ ion irradiation using focused ion beam. A marked reduction in the conductivity and the Curie temperature is induced…
Room temperature ferromagnetism has been one of the most sought after topics in today's emerging field of spintronics. It is strongly believed that defect- and inhomogeneity- free sample growth should be the optimal route for achieving…
The influence of configurational disorder on the magnetic properties of diluted Heisenberg spin systems is studied with regard to the ferromagnetic stability of diluted magnetic semiconductors. The equation of motion of the magnon Green's…
Motivated by the possibility of a strain tuning effect on electronic properties of graphene, the semimetal-Mott insulator transition process on the uniaxial honeycomb lattice is numerically studied using Determinant Quantum Monte Carlo. As…
Two-dimensional (2D) ferromagnetic (FM) semiconductors with high Curie temperature have long been pursued for electronic and spintronic applications. Here we provide a general strategy to achieve robust FM state in bilayer CrI3 of the…
We investigated the effect due to perpendicular magnetic field on quantum wires where spin-orbit interaction (SOI) of electrons is not neglected. Based on the calculated energy dispersion, the nonlinear ballistic conductance ($G$) and…
We present a quantitative theory for the effects of correlated doping on the ferromagnetism of diluted magnetic semiconductors. It predicts that room temperature ferromagnetism should be possible in homogeneous, but correlated, samples of…
Half-metallic ferromagnets can produce fully spin-polarized conduction electrons and can be applied to fabricate spintronic devices. Thus, in this study, the electronic structure, magnetic properties, and optical properties of GaSb, which…
The electronic structure of Mn doped GaAs and GaN have been examined within a multiband Hubbard model. By virtue of the positioning of the Mn d states, Mn doped GaAs is found to belong to the p-d metal regime of the Zaanen-Sawatzky-Allen…