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The advance of terahertz science and technology yet lays wait for the breakthrough in high-efficiency and high-power solid-state terahertz sources applicable at room temperature. Plasmon in two-dimensional electron gas (2DEG) has long been…
Strain engineering in semiconductor transistor devices has become vital in the semiconductor industry due to the ever increasing need for performance enhancement at the nanoscale. Raman spectroscopy is a non-invasive measurement technique…
Raman light scattering, low-temperature photoluminescence, light-scattering tomography, and hydrogenation were used to investigate optical properties of defects in strain-relaxed Si_{1-x}Ge_x (0.05 \le x \le 0.50) alloys. The…
Raman scattering (RS) spectra and current-voltage characteristics at room temperature were measured in six series of small samples fabricated by means of electron-beam lithography on the surface of a large size (5x5 mm) industrial monolayer…
Using resonant Raman scattering spectroscopy with 25 different laser lines, we describe the Raman scattering spectra of mono- and multi-layers 2H-molybdenum diselenide (MoSe$_2$) as well as the different resonances affecting the most…
Surface enhanced Raman scattering (SERS) effects on tin dioxide in the form of bulk material, nanostructured thin films and colloidal solutions were investigated. Raman spectra are characterized by the three Raman scattering peaks at 478,…
We model Raman processes in silicene and germanene involving scattering of quasiparticles by, either, two phonons, or, one phonon and one point defect. We compute the resonance Raman intensities and lifetimes for laser excitations between 1…
New results on the study of radiation effects in solid nitrogen and N$_2$-doped Ne matrix are presented with a focus on the so-called $\gamma$-line origin. The irradiation was carried out in dc regime with an electron beam of subthreshold…
Stable luminescent pi-radicals with doublet emission have aroused a growing interest for functional molecular materials. We have demonstrated a neutral pi-radical dye (4-N-carbazolyl-2,6-dichlorophenyl)bis(2,4,6-trichlorophenyl)-methyl…
Raman scattering and photoluminescence (PL) emission are used to investigate a single layer of tungsten disulfide (WS$_{2}$) obtained by exfoliating n-type bulk crystals. Direct gap emission with both neutral and charged exciton…
We present a Raman study of ZrAs_{2} single crystals, a nodal line semimetal with symmetry-enforced Dirac-like band crossings. We identified the symmetry of phonon modes by polarized light measurements and comparison with calculated phonon…
We demonstrate temperature-controlled spectral tunability of a partially-pumped single-wavelength random laser in a solid-state random laser based on DCM (4-dicyanomethylene-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran) doped PMMA…
Stimulated emission tomography (SET) is an excellent tool for characterizing the process of spontaneous parametric down-conversion (SPDC), which is commonly used to create pairs of entangled photons for use in quantum information protocols.…
The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport method. It was found that interaction with the nanowires…
The Wendelstein 7-X (W7-X) Thomson scattering (TS) diagnostic was upgraded to transiently achieve kilohertz sampling rates combined with adjustable measuring times. The existing Nd:YAG lasers are employed to repetitively emit "bursts", i.e.…
Proton-proton elastic scattering has been measured by the TOTEM experiment at the CERN Large Hadron Collider at {\surd}s = 7 TeV in dedicated runs with the Roman Pot detectors placed as close as seven times the transverse beam size (sbeam)…
Raman spectroscopy is one of the widely used methods in the analysis of various samples including carbon-based materials. This study aimed to identify the number of layers and defects in graphene using micro-Raman spectroscopy. More…
This work presents how first-principles simulations validated through experimental measurements lead to a new accurate prediction of the expected Raman shift as a function of strain in silicon. Structural relaxation of a strained primitive…
The single-pulse spectrum of self-amplified spontaneous emission (SASE) free electron lasers (FELs) is characterized by random fluctuations in frequency. The typical spectrum bandwidth for a hard x-ray FEL is in the range of 10-20 eV and is…
The concept of Dielectric Laser Acceleration (DLA) provides highest gradients among non-plasma particle accelerators. However, stable beam transport and staging have not been shown experimentally yet. We present a scheme that confines the…