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The mobility $\mu$ of excess electrons in dense Argon gas has been measured as a function of the applied electric field $E$ and of the gas density N at several temperatures in the range $142.6<T<200$ K, encompassing the critical temperature…

Plasma Physics · Physics 2007-05-23 A. F. Borghesani , Peter Lamp

The investigation of the mobility \(\mu\) of quasi-free electrons in dense, cold helium gas as a function of its density \(N\) is made difficult by the fact that a significant fraction of electrons is localized in low mobility bubbles. The…

Chemical Physics · Physics 2022-02-10 A. F. Borghesani

We report measurements of the electron drift mobility in dense argon gas over an extended range of densities, temperatures, and electric fields, supplementing our earlier work. The measurements confirm the validity of the heuristic model we…

Plasma Physics · Physics 2026-03-31 A. F. Borghesani , P. Lamp

We report experimental data of the mobility of O\(_2^-\) ions in argon gas as a function of the density in the temperature range between \(180\,\mbox{K}\le T\le 300\,\mbox{K}\). At the intermediate, though fairly large, densities of the…

Chemical Physics · Physics 2022-02-10 Armando Francesco Borghesani , Frédéric Aitken

We report on the temperature dependence of the mobility, $\mu$, of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ranging from 0.4$\times10^{12}$ cm$^{-2}$ to…

Experimental studies of electron mobilities in Neon as a function of the gas density have persistently shown mobilities up to an order of magnitude smaller than expected and predicted. A previously ignored mechanism (gas in--homogeneity…

Atomic Physics · Physics 2009-11-07 A. F. Borghesani , T. F. O'Malley

A new analysis and new Molecular Dynamics (MD) simulations of the measurements of the mobility $\mu_{i}$ of O$_{2}^{-} $ ions in dense supercritical Ar gas are reported. $\mu_{i}$ shows a marked dependence on the distance from the critical…

Plasma Physics · Physics 2011-06-01 A. F. Borghesani

In this letter, carrier transport in graded Al$\mathrm{_x}$Ga$\mathrm{_{1-x}}$N with a polarization-induced n-type doping as low as ~ 10$\mathrm{^{17}}$ cm$\mathrm{^{-3}}$ is reported. The graded Al$\mathrm{_x}$Ga$\mathrm{_{1-x}}$N is grown…

Mesoscale and Nanoscale Physics · Physics 2017-05-24 Mingda Zhu , Meng Qi , Kazuki Nomoto , Zongyang Hu , Bo Song , Ming Pan , Xiang Gao , Debdeep Jena , Huili Grace Xing

For several decades now, ultra-high-mobility GaAs two-dimensional electron systems (2DESs) have served as the hallmark platform for various branches of research in condensed matter physics. Fundamental to this long-standing history of…

Mesoscale and Nanoscale Physics · Physics 2022-08-26 Yoon Jang Chung , A. Gupta , K. W. Baldwin , K. W. West , M. Shayegan , L. N. Pfeiffer

The drift mobility of the negative oxygen ion in dense Argon gas near the liquid-vapor critical point has been measured as a function of the density. Near the critical temperature the zero-field density-normalized ion mobility shows a deep…

Plasma Physics · Physics 2009-10-31 A. F. Borghesani , F. Tamburini

We report measurements of GaAs/AlGaAs undoped field-effect transistors in which two-dimensional electron gases (2DEGs) of exceptional quality and versatility are induced without modulation doping. Electron mobilities at T=4.2 K and density…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 G. R. Facer , B. E. Kane , A. S. Dzurak , R. J. Heron , N. E. Lumpkin , R. G. Clark , L. N. Pfeiffer , K. W. West

We calculate using molecular dynamics simulations the transport properties of realistically modeled fluid argon at pressures up to $\simeq 50GPa$ and temperatures up to $3000K$. In this context we provide a critique of some newer…

Statistical Mechanics · Physics 2007-05-23 Sorin Bastea

Injection of photoelectrons into gaseous or liquid dielectrics is a widely used technique to produce cold plasmas in weakly ionized systems for investigating the transport properties of electrons. We report measurements of the collection…

Chemical Physics · Physics 2015-06-11 A. F. Borghesani , P. Lamp

Current-voltage dependence is measured in (Ga,Sb)-doped ZnO up to 150 kV/cm electric fields. A channel temperature is controlled by applying relatively short (few ns) voltage pulses to two-terminal samples. The dependence of electron drift…

We measure electronic transport through point contacts in the high-mobility electron gas in a Ga[Al]As heterostructure at different temperatures and bulk electron densities. The conductance through all point contacts increases with…

Mesoscale and Nanoscale Physics · Physics 2021-06-03 Lev V. Ginzburg , Carolin Gold , Marc P. Röösli , Christian Reichl , Matthias Berl , Werner Wegscheider , Thomas Ihn , Klaus Ensslin

We measure transport through a Ga[Al]As heterostructure at temperatures between 0.1 K and 30 K. Increasing the temperature enhances the electron-electron scattering rate and viscous effects in the two-dimensional electron gas arise. To…

We measure electron transport through point contacts in an electron gas in AlGaAs/GaAs heterostructures and graphene for a range of temperatures, magnetic fields and electron densities. We find a magnetoconductance peak around B = 0. With…

We report low-temperature electronic transport measurements performed in two multi-terminal Corbino samples formed in GaAs/Al-GaAs two-dimensional electron gases (2DEG) with both ultra-high electron mobility ($\gtrsim 20\times 10^6$…

We report new measurements of the mobility \(\mu\) of O$_{2}^{-}$ ions in supercritical neon in the range $45\,\mathrm{K}\le T\le 334\,\mathrm{K}$ for number density $N\ge 0.5\,$nm$^{-3}.$ We rationalize the experimental data of all…

Chemical Physics · Physics 2019-03-13 A. F , : , Borghesani , F. Aitken

We report new accurate mesasurements of the mobility of excess electrons in high density Helium gas in extended ranges of temperature $[(26\leq T\leq 77) K ]$ and density $[ (0.05\leq N\leq 12.0) {atoms} \cdot {nm}^{-3}]$ to ascertain the…

Plasma Physics · Physics 2016-09-08 A. F. Borghesani , M. Santini
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