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Semiconducting 2D materials, such as molybdenum disulfide (MoS2) and other members of the transition metal dichalcogenide family, have emerged as promising materials for applications in high performance nanoelectronics that exhibit…

Free space optical communication systems with extremely high detector sensitivities are attractive for various applications with low size, weight and power requirements. For these practical systems, integrated hardware elements with small…

A Silicon Photomultiplier, SiPM, is a metasystem of Avalanche Photodiodes, APDs, which embedded in a specific purpose electronic, becomes a metadevice with unique and useful advanced functionalities to capture, transmit and analyze…

Low-Gain Avalanche Detectors are gathering interest in the High-Energy Physics community thanks to their fast-timing and radiation-hardness properties, which are planned to be exploited, for example, in timing detectors for the upgrades of…

Silicon Photo-Multipliers (SiPMs) are detectors sensitive to single photons that are used to detect scintillation and Cherenkov light in a variety of physics and medical-imaging applications. SiPMs measure single photons by amplifying the…

Most active quench circuits used for single-photon avalanche detectors are designed either with discrete components which lack the flexibility of dynamically changing the control parameters, or with custom ASICs which require a long…

Electron tracking based Compton imaging is a key technique to improve the sensitivity of Compton cameras by measuring the initial direction of recoiled electrons. To realize this technique in semiconductor Compton cameras, we propose a new…

Atomically thin transition metal dichalcogenides have emerged as promising candidates for sensitive photodetection. Here, we report a photoconductivity study of biased mono- and bilayer molybdenum disulfide field-effect transistors. We…

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor…

Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top…

A hybrid photo-detector (HPD) consisting of a photocathode and a multi-pixel avalanche diode (MP-AD) was developed a few years ago. Our previous studies showed that its inherent potential for high resolution photon counting could be further…

Charge-coupled device (CCD), along with the complementary metal-oxide-semiconductor (CMOS), is one of the major imaging technologies. Traditional CCDs rely on the charge transfer between potential wells, which gives them advantages of…

Accurate characterization of quantum yield is crucial to the reconstruction of energy depositions in silicon at the eV scale. This work presents a new method for experimentally calculating quantum yield using vacuum UV-sensitive silicon…

To better understand the impact of the avalanche gain applied in the detector technology and apply this technology in our in-house astrophotonic projects, we have characterized a C-RED One camera and produced a stable and reliable method…

Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such G/Si Schottky junction diodes are typically in parallel with…

We demonstrate high count rate single photon detection at telecom wavelengths using a thermoelectrically-cooled semiconductor diode. Our device consists of a single InGaAs avalanche photodiode driven by a 2 GHz gating frequency signal and…

GeSn-based avalanche photodiode (APD) operating in shortwave infrared (SWIR) wavelength was demonstrated in this work. A separate absorption and charge multiplication (SACM) structure was employed to take advantage of long wavelength…

We present a stable and high-performance fiber-coupled NbTiN superconducting nanowire avalanche photon detector (SNAP). We demonstrate afterpulse-free operation in serially connected two SNAPs (SC-2SNAP), even in the absence of a choke…

The future interconnect links in intra- and inter-chip require the photodetector with high bandwidth, ultra-wide waveband, compact footprint, low-cost, and compatible integration process with silicon complementary metal-oxide-semiconductor…

The ability to detect single photons has led to the advancement of numerous research fields. Although various types of single-photon detector have been developed, because of two main factors - that is, (1) the need for operating at…