Related papers: Supersensitive avalanche silicon drift photodetect…
The photon detection efficiencies of multi-pixel Geiger-mode avalanche photodiodes manufactured by different produ cers are estimated. A new fit method of the response spectra to low-intensity light, taking into ac count after-pulse and…
Scalable fabrication of high quality photodetectors derived from synthetically grown monolayer transition metal dichalcogenides is highly desired and important for wide range of nanophotonics applications. We present here scalable…
4H-SiC low gain avalanche detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO$_2$ passivation layer. The I-V and C-V characteristics of the 4H-SiC…
The detection of photons produced during the avalanche development in gas chambers has been the subject of detailed studies in the past. The great progresses achieved in last years in the performance of micro-pattern gas detectors on one…
Separate absorption charge multiplication germanium tin on silicon avalanche photodiode offers a viable solution to achieve CMOS compatible, high sensitivity detection technology in SWIR or extended SWIR range, leveraging the excellent…
A novel concept for ion blocking in gas-avalanche detectors was developed, comprising cascaded micro-hole electron multipliers with patterned electrodes for ion defocusing. This leads to ion blocking at the 10^{-4} level, in DC mode, in…
We report on the characterization of the response of windowless silicon avalanche photo-diodes to electrons in the 90-900 eV energy range. The electrons were provided by a monoenergetic electron gun present in the LASEC laboratories of…
Semiconducting carbon nanotubes under high electric field stress (~10 V/um) display a striking, exponential current increase due to avalanche generation of free electrons and holes. Unlike in other materials, the avalanche process in such…
Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs, a large portion of carrier energy drawn from the electric…
The development of Low-Gain Avalanche Detectors has opened up the possibility of manufacturing silicon detectors with signal larger than that of traditional sensors. In this paper we explore the timing performance of Low-Gain Avalanche…
Photodetectors based on two dimensional materials have attracted growing interest. However, the sensitivity is still unsatisfactory even under high gate voltage. Here we demonstrate a MoS2 photodetector with a poly(vinylidene…
The Silicon Photomultiplier (SiPM) is a mature photodetector concept that is applied in a variety of applications ranging from medical imaging to automotive LiDAR systems. Over the last few years, improvements of the sensor performance are…
Two dimensional material/semiconductor heterostructures offer alternative platforms for optoelectronic devices other than conventional Schottky and p-n junction devices. Herein, we use MoS2/GaAs heterojunction as a self-driven photodetector…
Silicon Photomultipliers (SiPMs) have been widely adopted for photon detection in next-generation dark matter and neutrino detection experiments. Internal crosstalk, resulting from secondary photons produced during charge avalanches, is a…
Realizing both ultra-low breakdown voltage and ultra-high gain has been one of the major challenges in the development of high-performance avalanche photodetector. Here, we report that an ultra-high avalanche gain of 3*10^5 can be realized…
PIXELATED geiger-mode avalanche photodiodes(PPDs), often called silicon photomultipliers (SiPMs) are emerging as an excellent replacement for traditional photomultiplier tubes (PMTs) in a variety of detectors, especially those for subatomic…
A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. The ASIC features a matrix of hexagonal pixels with a 100 \mu m pitch, read by…
Most active quench circuits used for single-photon avalanche photodetectors (APDs) are designed either with discrete components which lack the flexibility of dynamically changing the control parameters, or with custom ASICs which require a…
Visible and near-infrared spectrum photonic integrated circuits are quickly becoming a key technology to address the scaling challenges in quantum information and biosensing. Thus far, integrated photonic platforms in this spectral range…
The performance of amorphous selenium (a-Se) as a cryogenic photodetector material is evaluated through a series of experiments using laterally structured devices operated in a custom optical test stand. These studies investigate the…