Related papers: Capacitance of Silicon Pixels
The High Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC) requires new high-radiation tolerant silicon pixel sensors for the innermost part of the tracking detector in the CMS experiment. The innermost layer of the tracker,…
The silicon pixel detector (SPD) of the ALICE experiment in preparation at the Large Hadron Collider (LHC) at CERN is designed to provide the precise vertex reconstruction needed for measuring heavy flavor production in heavy ion collisions…
A new generation of 3D silicon pixel detectors with a small pixel size of 50$\times$50 and 25$\times$100 $\mu$m$^{2}$ is being developed for the HL-LHC tracker upgrades. The radiation hardness of such detectors was studied in beam tests…
In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO…
In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation…
Pixel detectors for precise particle tracking in high energy physics have been developed to a level of maturity during the past decade. Three of the LHC detectors will use vertex detectors close to the interaction point based on the hybrid…
A CMOS pixel sensor, named Supix-1, is developed for a pixelated silicon tracker for the Circular Electron-Positron Collider (CEPC) project. The sensor, consisted of nine sectors varying in pixel sizes, diode sizes and geometries, is…
Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 $\mu$m, produced at CiS, and 100-200 $\mu$m thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and…
Capacitance-voltage (CV) measurements are a widely used technique in silicon detector physics. It gives direct information about the full depletion voltage and the effective doping concentration. However, for highly irradiated sensors, the…
Recent advances in CMOS imaging sensor technology , e.g. in CMOS pixel sensors, have proven that the CMOS process is radiation tolerant enough to cope with certain radiation levels required for tracking layers in hadron collider…
We report radiation hardness tests performed at the Frascati Neutron Generator on silicon Photo-Multipliers, semiconductor photon detectors built from a square matrix of avalanche photo-diodes on a silicon substrate. Several samples from…
Capacitance measurement is a useful technique in studying quantum devices, as it directly probes the local particle charging properties, i.e. the system compressibility. Here we report one approach which can measure capacitance from mK to…
Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF,…
The ATLAS experiment will undergo a major upgrade of the tracker system in view of the high luminosity phase of the LHC (HL-LHC) to start operation in 2026. The most severe challenges are to be faced by the innermost layers of the pixel…
The CMS experiment will include a pixel detector for pattern recognition and vertexing. It will consist of three barrel layers and two endcaps on each side, providing three space-points up to a pseudoraditity of 2.1. Taking into account the…
Small-pitch 3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC pixel detector upgrades. Prototype 3D sensors with pixel sizes of 50$\times$50 and 25$\times$100 $\mu$m$^{2}$…
Resistance thermometry provides a time-tested method for taking temperature measurements that has been painstakingly developed over the last century. However, fundamental limits to resistance-based approaches along with a desire to reduce…
Active edge p-on-p silicon pixel detectors with thickness of 100 $\mu$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and…
In the framework of the HL-LHC upgrade, the ATLAS experiment plans to introduce an all-silicon inner tracker to cope with the elevated occupancy. To investigate the suitability of pixel sensors using the proven planar technology for the…
Multi-photon interference in large multi-port interferometers is key to linear optical quantum computing and in particular to boson sampling. Silicon photonics enables complex interferometric circuits with many components in a small…