Related papers: The H1 Silicon Vertex Detector

Swift, high resolution CMOS pixel sensors are being developed for the ILC vertex detector, aiming to allow approaching the interaction point very closely. A major issue is the time resolution of the sensors needed to deal with the high…

We evaluate the performances of a 100 um-thick silicon strip detector (SSD) with a 300 MeV proton beam and a 90Sr beta-ray source. Signals from the SSD have been read out using a VLSI chip. Common-mode noise, signal separation efficiency…

The architecture of the ZEUS Micro Vertex Detector data acquisition system and the implementation of its second level trigger, the ZEUS Global Track Trigger are described. Data from the vertex detectors HELIX read-out chips, corresponding…

The high-luminosity upgrade of the CERN LHC requires the replacement of the CMS tracking detector to cope with the increased radiation fluence while maintaining its excellent performance. An extensive R\&D program, aiming at using 3D pixel…

Silicon carbide (SiC) Schottky diodes 21 mum thick with small surfaces and high N-dopant concentration have been used to detect alpha particles and low energy light ions. In particular 12C and 16O beams at incident energies between 5 and 18…

For the purpose of withstanding very high radiation doses, silicon pixel sensors with a 3D electrode geometry are being developed. Detectors of this kind are highly interesting for harch radiation environments such as expected in the High…

Photonic integrated circuits (PICs) are crucial for advancing optical communications, promising substantial gains in data transmission speed, bandwidth, and energy efficiency compared to conventional electronics. Telecom-wavelength…

CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher…

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area…

Studies of a single photon counting hybrid pixel detector for X-ray imaging applications are presented. A silicon- and a CdTe-sensor were bump bonded onto the MPEC pixel readout chip and could be successfully operated. A new USB based…

Some preliminary thoughts on how to design and develop the DAQ architecture for the Silicon tracking system at the future Linear electron positron collider, are briefly presented here. The proposed structure includes three DAQ levels. The…

The need for a high-performance transceiver with high Signal to Noise Ratio (SNR) has driven the communication system to utilize the latest technique identified as oversampling systems. It was the most economical modulator and decimation in…

We report on the experimental study made on a successive prototype of High-Voltage CMOS (HV-CMOS) ATLASPix2 sensor for the tracking detector application, developed with 180 nm feature size. These sensors are to qualify mainly the peripheral…

The High Luminosity LHC (HL-LHC) upgrade requires the planned Inner Tracker (ITk) of the ATLAS detector to tolerate extremely high radiation doses. Specifically, the innermost parts of the pixel system will have to withstand radiation…

Nonlinear photonic chips have succeeded in generating and processing signals all-optically with performance far superior to that possible electronically - particularly with respect to speed. Although silicon-on-insulator has been the…

An upgrade of the ATLAS experiment for the High Luminosity phase of LHC is planned for 2024 and foresees the replacement of the present Inner Detector (ID) with a new Inner Tracker (ITk) completely made of silicon devices. Depleted active…

The nanostructure of hydrogenated amorphous silicon (a Si:H) is studied by a combination of small-angle X-ray (SAXS) and neutron scattering (SANS) with a spatial resolution of 0.8 nm. The a-Si:H materials were deposited using a range of…

The performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation…

The physics goals at the future e+e- linear collider require high performance vertexing and impact parameter resolution. Two possible technologies for the vertex detector of an experimental apparatus are outlined in the paper: an evolution…

Silicon single-photon avalanche diode (SPAD) is a core device for single-photon detection in the visible and the near-infrared range, and widely used in many applications. However, due to limits of the structure design and device…