Related papers: Spin diffusion in doped semiconductors
Within the kinetic energy driven superconducting mechanism, the magnetic nature of cuprate superconductors is discussed. It is shown that the superconducting state is controlled by both charge carrier gap function and quasiparticle coherent…
The doping dependence of spin excitations in Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$ is studied based on a two-orbital model under RPA approximation. The interplay between the spin-density-wave (SDW) and superconductivity (SC) is considered in…
The dynamics of a doped hole in the orthogonal-dimer spin system is investigated systematically in one, two and three dimensions. By combining the bond-operator method with the self-consistent Born approximation, we argue that a dispersive…
In this letter, we study enhanced-retarded diffusion of oxygen in doped silicon by means of first principle calculations. We found that the migration of oxygen dimers can not be significantly affected by strain, doping type or rate. We…
We study the systematic doping evolution of nodal dispersions by in-situ angle-resolved photoemission spectroscopy on the continuously doped surface of a high-temperature superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$. We reveal that the…
We characterize paramagnetic Mott insulators by their response to static, non-magnetic impurities. States with spinon deconfinement (or spin-charge separation) are distinguished from those with spinon confinement by distinct impurity…
Injecting spins into a semiconductor channel and transforming the spin information into a significant electrical output signal is a long standing problem in spintronics. Actually, this is the prerequisite of several concepts of spin…
A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of…
The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between…
In a heavily doped semiconductor with weak spin-orbital interaction the Dyakonov-Perel spin relaxation rate is known to be proportional to the Drude conductivity. We argue that in the case of weak spin-orbital interaction this…
Plasmons in heavily doped semiconductor layers are optically active excitations with sharp resonances in the 5-15 um wavelength region set by the doping level and the effective mass. Here we demonstrate that volume plasmons can form in…
We report polarized- and unpolarized- neutron inelastic scattering measurements of the magnetic excitation spectrum in the spin-charge ordered phase of La3/2Sr1/2NiO4. Up to energies of ~30 meV we observe broad magnetic modes characteristic…
Employing the four-band tight-binding model we study theoretically the doping dependence of the spin response in the normal state of novel Fe-based pnictide superconductors. We show that the commensurate spin density wave (SDW) transition…
Half-metallicity (full spin polarization of the Fermi surface) usually occurs in strongly correlated electron systems. We demonstrate that doping a spin-density wave insulator in the weak-coupling regime may also stabilize half-metallic…
Device concepts in semiconductor spintronics make long spin lifetimes desirable, and the requirements put on spin control by schemes of quantum information processing are even more demanding. Unfortunately, due to spin-orbit coupling…
A theory of spin-polarized electron transport in ferromagnet/semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductor structures, is developed. The aim is to provide…
In the presence of nonlocal phase shift effects, a quasiparticle can remain topologically stable even in a spin-charge separation state due to the confinement effect introduced by the phase shifts at finite doping. True deconfinement only…
The drift-diffusion formalism for spin-polarized carrier transport in semiconductors is generalized to include spin-orbit coupling. The theory is applied to treat the extrinsic spin Hall effect using realistic boundary conditions. It is…
It is well known that the efficiency of a good thermoelectric material should be optimized with respect to doping concentration. However, much less attention has been paid to the optimization of the dopant's energy level. Thermoelectric…
The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium…