Related papers: Magnetic ordering in GaAlAs:Mn double well structu…
A microscopic Hamiltonian for interacting manganese impurities in diluted magnetic semiconductors (DMS) is derived. It is shown that in p -type III-V DMS the indirect exchange between Mn impurities has similarities with the Zener mechanism…
Using symmetry breaking strain to tune the valley occupation of a two-dimensional (2D) electron system in an AlAs quantum well, together with an applied in-plane magnetic field to tune the spin polarization, we independently control the…
We present an Anderson-type model Hamiltonian with exchange coupling between the localized spins and the confined holes in the quantum dots to study the ferromagnetism in diluted magnetic semiconductor (DMS) quantum dot arrays embedded in…
We develop a mean-field theory of carrier-induced ferromagnetism in diluted magnetic semiconductors. Our approach represents an improvement over standard RKKY model allowing spatial inhomogeneity of the system, free-carrier spin…
A simple model of circular polarization dependence on Mn delta-layer position in LED heterostructures with InGaAs/GaAs quantum well is proposed, being able to explain quite accurately recent fascinating experimental results [S.V. Zaitsev,…
An explanation is given for the charge order, orbital order and insulating state observed in half-doped manganese oxides, such as Nd$_{1/2}$Sr$_{1/2}$MnO$_{3}$. The competition between the kinetic energy of the electrons and the magnetic…
We have applied a novel scanned probe method to directly resolve the interior structure of a GaAs/AlGaAs two-dimensional electron system in a tunneling geometry. We find that the application of a perpendicular magnetic field can induce…
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where…
The magnetic phase diagram of the Mn-based semi-Heusler alloys is determined at T=0 using first-principles calculations in conjunction with the frozen-magnon approximation. We show that the magnetism in these systems strongly depends on the…
Magnetic structures and the relationship between spin and charge-orbital orderings of an A-site ordered double-perovskite manganite SmBaMn2O6, an anticipated multiferroic material, were investigated by means of neutron diffraction. The spin…
We evaluate the distribution of Hall conductances in magnetic subbands of two-dimensional electron gas with Rashba spin-orbit (SO) coupling placed in a periodic potential and perpendicular magnetic field. In this semiconductor structure the…
We report magneto-transport measurements on high-mobility two-dimensional electron systems (2DESs) confined in In_0.75Ga_0.25As/In_0.75Al_0.25As single quantum wells. Several quantum Hall states are observed in a wide range of temperatures…
An argument is made on the existence of a low-temperature itinerant antiferromagnetic (AF) spin alignment, rather than persistent helical (PH), in the ground state of a two dimensional electron gas in a semiconductor quantum well with…
Magnetic ordering phenomena have a profound influence on the macroscopic properties of correlated-electron materials, but their realistic prediction remains a formidable challenge. An archetypical example is the ternary nickel oxide system…
Replacing independent single quantum wells inside a strongly-coupled semiconductor microcavity with double quantum wells produces a special type of polariton. Using asymmetric double quantum wells in devices processed into mesas allows the…
We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find…
Recent neutron scattering and thermodynamic measurements suggest that Weyl electrons in the emergent Weyl semimetal SmAlSi mediate unconventional magnetic interactions and induce spiral magnetic order. In this work, we investigate the…
We present magnetic and tunnel transport properties of (Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealing procedure. The conjugate increase of magnetization and tunnel magnetoresistance obtained after annealing is…
In a GaAs/AlGaAs two-dimensional electron system with two occupied subbands, the experimentally determined phase diagram in the density-magnetic field plane exhibits rich topological features. Ring-like structures are observed at even…
The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic…