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Related papers: Electron self-trapping in intermediate-valent SmB6

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We explore the intriguing topological itinerant magnet MgMn$_6$Sn$_6$, characterized by bilayer kagome Mn layers encasing a hexagonal Sn layer. Using \textit{ab initio} Density functional theory and Dynamical mean-field theory calculations,…

Strongly Correlated Electrons · Physics 2024-08-06 Jyotirmoy Sau , Hrishit Banerjee , Sourabh Saha , Nitesh Kumar , Manoranjan Kumar

The Kondo insulator SmB6 has long been known to exhibit low temperature transport anomalies whose origin is of great interest. Here we uniquely access the surface electronic structure of the anomalous transport regime by combining…

We examine the normal-state temperature and doping dependence of the Hall coefficient in the context of a pair-fluctuation scenario, based on a model where itinerant electrons are hybridized with localized electron pairs via a charge…

Superconductivity · Physics 2009-10-31 Alfonso Romano , Julius Ranninger

Achieving true bulk insulating behavior in Bi$_2$Se$_3$, the archetypal topological insulator with a simplistic one-band electronic structure and sizable band gap, has been prohibited by a well-known self-doping effect caused by selenium…

Materials Science · Physics 2017-01-19 Paul Syers , Johnpierre Paglione

The electron-electron scattering increases the resistance of ballistic many-mode channels whose width is smaller than their length. We show that this increase saturates in the limit of infinitely long channels. Because the mechanisms of…

Mesoscale and Nanoscale Physics · Physics 2018-04-12 K. E. Nagaev

Self-trapping of an electron due to its interaction with bending fluctuations in a flexible crystalline membrane is considered. Due to the dependence of the electron energy on the corrugations of the membrane, the electron can create around…

Mesoscale and Nanoscale Physics · Physics 2011-01-14 M. I. Katsnelson

Ionization of polar liquids and glasses often yields metastable electron centers collectively known as weakly bound (wb) electrons that absorb to the red of the ground state of the solvated/trapped electron. Formation of these species is…

Chemical Physics · Physics 2022-04-26 Ilya A. Shkrob

We theoretically study transport properties of a two-dimensional electron system on a hydrogen-passivated Si(111) surface in the field-effect-transistor (FET) configuration. We calculate the density and temperature dependent mobility and…

Materials Science · Physics 2009-11-11 E. H. Hwang , S. Das Sarma

The low-field electron diffusion, noise, and the conduction in amorphous chalcogenides are investigated by means of a Monte Carlo implementation of a full three- dimensional variable-range hopping transport model between localized states.…

Materials Science · Physics 2012-03-05 Fabrizio Buscemi , Enrico Piccinini , Rossella Brunetti , Massimo Rudan , Carlo Jacoboni

The question whether excess electrons in SrTiO3 form free or trapped carriers is a crucial aspect for the electronic properties of this important material. This fundamental ambiguity prevents a consistent interpretation of the puzzling…

Strongly Correlated Electrons · Physics 2018-03-15 Xianfeng Hao , Zhiming Wang , Michael Schmid , Ulrike Diebold , Cesare Franchini

The advent of new-class of high-mobility semiconducting polymers opens up a window to address fundamental issues in electrical transport mechanism such as hopping between localized states versus extended state conduction. Here, we…

Materials Science · Physics 2015-06-23 Satyaprasad P. Senanayak , A. Z. Ashar , Catherine Kanimozhi , Satish Patil , K. S. Narayan

Topological Kondo insulator SmB6 has attracted quite a lot of attentions from condensed matter physics community. A number of unique electronic properties, including low- temperature resistivity anomaly, 1D electronic transport and 2D Fermi…

Materials Science · Physics 2016-07-07 Zengji Yue , Qinjun Chen , Xiaolin Wang

Samarium hexaboride is a candidate for the topological Kondo insulator state, in which Kondo coherence is predicted to give rise to an insulating gap spanned by topological surface states. Here we investigate the surface and bulk electronic…

MOSFETs based on wide band-gap semiconductors are suitable for operations at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated which results in device degradation. Recently…

Materials Science · Physics 2016-06-13 Xiao Shen , Sarit Dhar , Sokrates T. Pantelides

We investigate the effect due to background impurities embedded in the region of two-dimensional electron gases to the magnetotransport. These impurities are achieved by homogeneously incorporating Si atoms in single quantum wells of high…

Mesoscale and Nanoscale Physics · Physics 2015-11-26 E. P. Rugeramigabo , L. Bockhorn , R. J. Haug

Temperature dependent transport of disordered electronic systems is examined in the presence of strong correlations. In contrast to what is assumed in Fermi liquid approaches, finite temperature behavior in this regime proves largely…

Strongly Correlated Electrons · Physics 2007-05-23 M. C. O. Aguiar , E. Miranda , V. Dobrosavljevic , E. Abrahams , G. Kotliar

Electronic trap states are a critical yet unavoidable aspect of semiconductor devices, impacting performance of various electronic devices such as transistors, memory devices, solar cells, and LEDs. The density, energy level, and position…

When electrons are confined to move in a plane, strange things happen. For example, under normal circumstances, they are not expected to conduct electricity at low temperatures. However, recent experiments on a dilute electron gas confined…

Strongly Correlated Electrons · Physics 2009-10-31 Philip Phillips , Subir Sachdev , Sergey Kravchenko , Ali Yazdani

We consider the problem of interacting electrons constrained to move on a fluctuating one-dimensional string. An effective low-energy theory for the electrons is derived by integrating out the string degrees of freedom to lowest order in…

Strongly Correlated Electrons · Physics 2009-11-10 Dror Orgad

We investigate the electronic transport coefficients in unconventional superconductors at low temperatures, where charge and heat transport are dominated by electron scattering from random lattice defects. We discuss the features of the…

Superconductivity · Physics 2011-04-08 Matthias J. Graf
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