Related papers: Electron self-trapping in intermediate-valent SmB6
We argue that because of valence-fluctuation caused dynamical changes (fluctuations) of impurity energies in the impurity band of SmB6, energies of electrons occupying impurity sites can be due to the uncertainty principle only estimated…
We advert to the fact that presence of valence fluctuations (VFs) in semiconductors with in-gap impurity bands unconditionally leads to dynamical changes (fluctuations) of energies of localized impurity states. We provide arguments that in…
The intermediate-valence compound SmB6 is a well-known Kondo insulator, in which hybridization of itinerant 5d electrons with localized 4f electrons leads to a transition from metallic to insulating behavior at low temperatures. Recent…
We argue that because of valence-fluctuation caused dynamical changes (fluctuations) of impurity energies in an impurity band of valence fluctuating semiconductors both occupied and unoccupied sites can be found in the impurity band above…
We consider electron self-trapping due to its interaction with order-parameter fluuctuations at the second-order phase-transition or critical point (for example, at the Curie temperature in magnetic or ferroelectric semiconductors). Using…
EuB$_6$ is a magnetic semiconductor in which defects introduce charge carriers into the conduction band with the Fermi energy varying with temperature and magnetic field. We present experimental and theoretical work on the electronic…
The discovery of topologically non-trivial states in band insulators has induced an extensive search for topological phase in strongly correlated electron systems. In particular, samarium hexaboride (SmB$_6$) has drawn much attention as it…
We studied electrical resistance of a single-crystalline SmB6 sample with a focus on the region of the "low-temperature resistivity plateau". Our observations did not show any true saturation of the electrical resistance at temperatures…
Comprehensive study using DC transport, specific heat, magnetization, and two-coil mutual inductance measurements unveils an understanding of three temperature regimes in SmB$_6$: (i) $T \geq T^{*}$ ($\sim66$K), (ii) $T_g$ ($\sim40$ K)…
In this work we report on Hall effect, resistivity and thermopower measurements in n-type indium selenide at room temperature under either hydrostatic and quasi-hydrostatic pressure. Up to 40 kbar (= 4 GPa), the decrease of carrier…
Evidence from first-principles calculations indicates that excess electrons in BiFeO$_3$ form small polarons with energy levels deep inside the electronic band gap. Hence, $n$-type electronic transport could occur by hopping of small…
We study the low temperature conductivity of the electron accumulation layer induced by the very strong electric field at the surface of $\text{SrTiO}_3$ sample. Due to the strongly nonlinear lattice dielectric response, the…
The microscopic mechanism of heavy band formation, relevant for unconventional superconductivity in CeCoIn$_5$ and other Ce-based heavy fermion materials, depends strongly on the efficiency with which $f$ electrons are delocalized from the…
Recent theoretical calculations and experimental results suggest that the strongly correlated material SmB$_{6}$ may be a realization of a topological Kondo insulator. We have performed an angle-resolved photoemission spectroscopy study on…
Electrons in condensed matter may transition into a variety of broken-symmetry phase states due to electron-electron interactions. Applying diverse mean-field approximations to the interaction term is arguably the simplest way to identify…
SmB$_6$ has been predicted to be a Kondo Topological Insulator with topologically protected conducting surface states. We have studied quantitatively the electrical transport through surface states in high quality single crystals of…
SmB6 is a promising candidate material that promises to elucidate the connection between strong correlations and topological electronic states, which is a major challenge in condensed matter physics. The electron correlations are…
SmB$_6$ exhibits a small (15-20 meV) bandgap at low temperatures due to hybridized $d$ and $f$ electrons, a tiny (3 meV) transport activation energy $(E_{A})$ above 4 K, and surface states accessible to transport below 2 K. We study its…
The low-temperature transport properties of a molecule are studied in the field-effect transitor geometry. The molecule has an internal mechanical mode that modulates its electronic levels and renormalizes both the interactions and the…
Electrical resistivity, magnetoresistivity, and the Hall effect have been studied in a topological semimetal WTe2 single crystal in the temperature range from 12 to 200 K under magnetic fields up to 9 T. It has been found that quadratic…