Related papers: Bandgap renormalization of modulation doped quantu…
Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as…
Quantum confinement profoundly affects the properties and interactions of electrons, holes, and excitons in nanomaterials. We apply first-principles calculations to study the effects of extreme quantum confinement on the electronic,…
We have performed time-resolved spectroscopy on InAs quantum dot ensembles in photonic crystal membranes. The influence of the photonic crystal is investigated by varying the lattice constant systematically. We observe a strong slow down of…
Recent scanning tunneling microscope (STM) measurements discovered remarkable electronic inhomogeneity, i.e. nano-scale spatial variations of the local density of states (LDOS) and the superconducting energy gap, in the high-Tc…
In this paper, we address the problem of luminescence polarization in the case of nanostructures characterized by an in-plane shape asymmetry. We develop a simple semi-qualitative model revealing the mechanism that accounts for the…
The effects of doping on a one-dimensional wire in a charge density wave state are studied using the density-matrix renormalization group method. We show that for a finite number of extra electrons the ground state becomes conducting but…
Optical excitation serves as a powerful approach to control the electronic structure of layered Van der Waals materials via many-body screening effects, induced by photoexcited free carriers, or via light-driven coherence, such as optical…
We report on the study of many-body interactions in a single high quality V-shaped quantum wire by means of continuous and time-resolved microphotoluminescence. The transition from a weakly interacting exciton gas when the carrier density n…
The energy and photoluminescence (PL) spectra of a two-dimensional electron gas (2DEG) interacting with a valence-band hole are studied in the high-magnetic-field limit as a function of the filling factor nu and the separation $d$ between…
A key to understand how electrons behave in crystalline solids is the band structure that connects the energy of electron waves to their wavenumber (k). Even in the phase of matter with only short-range order (liquid or amorphous solid),…
Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780…
Germanium (Ge) has emerged as a contender for scalable solid-state spin qubits. This interest stems from the numerous attractive properties of hole spin in Ge low-dimensional systems and their compatibility with the standards of silicon…
Quantum dots acting as single photon emitters in the blue-green range are fabricated and characterized at cryogenic temperature. They consist in CdSe dots inserted in (Zn,Mg)Se nanowires with a thick shell. Photoluminescence spectra, decay…
The measurement of the bandgap in quasi-one dimensional materials such as carbon nanotubes is challenging due to its dimensionality. In this work, we measure the electronic bandgap of networks of polymer-wrapped semiconducting single-walled…
Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-density for single QD devices and experiments are challenging to…
Electronic and optical excitations in two-dimensional moir\'e systems are uniquely sensitive to local atomic registries, leading to materials- and twist-angle specific correlated electronic ground states with varied degree of localization.…
We demonstrate the ability to control the spontaneous emission dynamics of self-assembled quantum dots via the local density of optical modes in 2D-photonic crystals. We show that an incomplete 2D photonic bandgap is sufficient to…
Bandgap engineering in semiconductors is required for the development of photonic and optoelectronic devices with optimized absorption and emission energies. This is usually achieved by changing the chemical or structural composition during…
We report on composition controlled MoS$_{2}$ and MoO$_{x}$ (x=2 and 3) compounds electrodeposited on Flourine dopped Tin Oxide (FTO) substrate. It was observed that the relative content has systematic electrical and optical changes for…
We calculate the Coulomb interaction induced density, temperature and magnetization dependent many-body band-gap renormalization in a typical diluted magnetic semiconductor GaMnAs in the optimally-doped metallic regime as a function of…